SPICE MODEL of 2SK3454 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK3454 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK3454 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: 2SK3454 MANUFACTURER: NEC Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 5 Measurement Simulation 4 3 gfs 2 1 0 0 1 2 3 4 5 ID : Drain Current A Comparison table Id(A) gfs Error(%) Measurement Simulation 0.001 0.012 0.013 4.839 0.002 0.048 0.050 4.167 0.005 0.080 0.083 3.750 0.01 0.106 0.111 4.717 0.02 0.213 0.222 4.225 0.05 0.257 0.263 2.335 0.1 0.475 0.455 -4.211 0.2 0.634 0.659 3.943 0.5 1.002 1.042 3.992 1 1.246 1.300 4.334 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 1.0KA 100A 10A 1.0A 100mA 10mA 1.0mA 100uA 0V 4V 8V 12V 16V 20V I(V3) V_V2 Evaluation circuit V3 U1 0Vdc 2SK3454 Vv ariable 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result 100.000 Measurement Simulation 10.000 ID : Drain Current A 1.000 0.100 0.010 0.001 0.00 4.00 8.00 12.00 16.00 20.00 VGS : Gate to Source Voltage V Simulation Result ID(A) VGS(V) Error (%) Measurement Simulation 0.001 3.640 3.564 -2.088 0.002 3.730 3.592 -3.700 0.005 3.760 3.636 -3.298 0.010 3.810 3.685 -3.281 0.020 3.865 3.755 -2.846 0.050 4.053 3.892 -3.972 0.100 4.213 4.053 -3.798 0.200 4.420 4.265 -3.507 0.500 4.770 4.708 -1.300 1.000 5.070 5.238 3.314 2.000 5.665 5.929 4.660 5.000 7.012 7.362 4.991 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 7.0A 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V I(V3) V_VDS Evaluation circuit V3 U1 0Vdc 2SK3454 VDS 10Vdc 0Vdc VGS 0 Simulation Result ID=4A, VGS=10V Measurement Simulation Error (%) R DS (on) () 0.500 0.499 -0.200 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 0 5n 10n 15n 20n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U1 2SK3454 PER = 1000u Dbreak PW = 600u W1 TF = 10n + D1 TR = 10n I2 - TD = 0 7Adc I2 = 1m W I1 IOFF = 0.1mA I1 = 0 ION = 0uA V1 200Vdc 0 Simulation Result VDD=200V,ID=7A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 3.500 3.509 0.257 Qgd(nc) 10.000 10.060 0.600 Qg(nc) 18.000 14.930 -17.056 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result VDS(V) Cbd(pF) Error(%) Measurement Simulation 0.1 179.000 179.070 0.039 0.2 169.200 169.180 -0.012 0.5 147.900 147.850 -0.034 1 128.500 128.498 -0.002 2 108.000 108.021 0.019 5 68.000 67.985 -0.022 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 15.0V 12.5V 10.0V 7.5V 5.0V 2.5V 0V 1.85us 1.90us 1.95us 2.00us 2.05us 2.10us 2.15us V(2) V(3)/12.5 Time Evaluation circuit 3 L2 10u U1 2SK3454 RL R1 L1 2 31.25 V1 = 0 10 30nH V2 = 20 V2 VDD TD = 2u R2 125Vdc TR = 6n TF = 7n 10 PW = 1u PER = 10u 0 Simulation Result ID=4A, VDD=125V Measurement Simulation Error(%) VGS=10V Ton(ns) 11.000 11.066 0.600 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 30A VGS=10V 20A 10A 0A 0V 10V 20V 30V 40V 50V 60V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U1 2SK3454 Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc 2SK3454 U1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation 10.00 Drain reverse current IDR(A) 1.00 0.10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 Source: Drain voltage VSD(V) Simulation Result IDR(A) VDS(V) VDS(V) %Error Measurement Simulation 0.010 0.630 0.625 -0.794 0.020 0.645 0.643 -0.310 0.050 0.660 0.666 0.909 0.100 0.680 0.686 0.882 0.200 0.700 0.709 1.286 0.500 0.740 0.747 0.946 1.000 0.780 0.787 0.897 2.000 0.850 0.837 -1.529 5.000 0.930 0.934 0.430 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 18.8us 19.6us 20.4us 21.2us 22.0us 22.8us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.7v TD = 100n TR = 10ns TF = 19ns 2SK3454 PW = 20us U1 PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trr(ns) 680.000 680.518 0.076 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Trj=416(ns) Trb=264(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 U1 2SK3454 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008