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Masked ion beam lithography

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Masked ion beam lithography

  1. 1. MASKED ION BEAM LITHOGRAPHY ARUNBALAJI.S
  2. 2. MIBL - INTRODUCTION • Successing technology of Ion Beam Lithography • New approach for Biomaterial Patterning • It allows selected Ion beam to be allowed to fall on the mask • Ions of Ca,Mg,Na,P are used as Sources • Technique of implanting the dopants in the manufacturing process of semiconductors.
  3. 3. MIBL- Setup
  4. 4. Techniques in Ion Beam Lithography
  5. 5. • Hydrogen and helium ion beams a extracted from the suitable ion source. • M X B mass separation unit is included. • Proper electrostatic setup is arranged to get the parallel ion beam • The Mask is made up of Silicon, copper. • Ion Beam Induced heating on the mask is avoided by arrangement of cooling setup for mask
  6. 6. MAJOR TYPES OF ION SOURCES  Liquid metal ion sources  Gas field ion sources  Volume Plasma sources
  7. 7. Liquid metal ion source
  8. 8. GAS FIELD ION SOURCE
  9. 9. Volume plasma Source • Mostly used in ion implanters, ion milling machines and other ion accelerators • Sources of desired ions are introduced as gas. • Electron bombardment is used to ionize it.
  10. 10. Importance of ion beam over other techniques • Nanofabrication without multistep process. • When a focused beam of ions is traced over a surface, it removes material to form a trench approximately equal to the beam diameter. • rewire integrated circuits by cutting or depositing metal film conductors. • useful in the pre-production development phase to alter a circuit that may not be working because of a design or fabrication error
  11. 11. Advantages of using ions over electrons  Ions are larger than electrons, so less change in chemical nature of substrate,no x- ray emissions in the sample.  Ions are heavier than electrons . So ions gain high momentum.  Ion beam milling depends on the how much ions needed to remove the material, it is independent of the material’s chemical nature and material strength.  Material deposition on the specific sites of the circuit.
  12. 12. MIBL - ADVANTAGES • This method overcomes the problems of beam dispersion and diffraction in the Optical and X-ray lithographic systems • It reduces the multiple steps like film casting, exposure, developing and etching process as in photolithography. • The surface chemistry of substrate is tailored better compared to photolithography. • PMMA surface modification by calcium and phosphorous ions are used to create microwells for biomems devices •
  13. 13. MIBL -APPLICATIONS • High Volume gate level printing of Field emitter Displays(FED). • Fabrication of surface acousting wave and microoptic devices. • Deep trenching reactive ion beam etching in MEMS and in particular for silicon Microsystems
  14. 14. THANK YOU

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