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The document discusses tunnel diodes, which are fast semiconductor diodes that can operate at microwave frequencies. Key points: - Tunnel diodes have an area of negative resistance on their characteristic I-V curve due to tunneling current. - They have a very narrow depletion region between the p-type and n-type areas compared to normal diodes. - Backward diodes are a type of tunnel diode where one side of the junction is less heavily doped than the other. They can be used with the diode's polarity reversed, giving them their name. - Both tunnel diodes and backward diodes have applications in detection, rectification, and switching due to their electrical properties.
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I AM SARMAD KHOSA
BSIT (5TH A)
(ISP)
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YOUTUBE CHANNEL:::
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A Zener diode is a type of diode that permits current not only in the forward direction like a normal diode, but also in the reverse direction if the voltage is larger than the breakdown voltage known as “Zener knee voltage” or “Zener voltage”.
The device is named after American physicist Clarence Melvin Zener, who first described the ZENER EFFECT in1934. Later his work led to the BELL LABS implantation of the effect in form of an electronic device, the ZENER DIODE.
Zener diodes are a modified form of PN silicon diode used extensively for voltage regulation. The P type and N type silicon used is doped more heavily than a standard PN diode.
This causes a very thin depletion region. The zener diodes breakdown characteristics are determined by the doping process
Zeners are commercially available with voltage breakdowns of 1.8 V to 200 V.
When a Zener diode is forward biased, it operates as a normal diode.
In forward biased P side connected to positive and N side connected to negative terminal of battery. In this case the electrons and holes are swept across the junction and large current flow through it.
In case of reverse biased current practically zero and at certain voltage which called Zener voltage the current increases sharply.
Each Zener diode has breakdown rating which specifies the max voltage that can be dropped across it.
Zener diodes are designed to operate in reverse breakdown. Two types of reverse breakdown in a zener diode are AVALANCHE and ZENER. The avalanche break down occurs in both rectifier and zener diodes at a sufficiently high reverse voltage. Zener breakdown occurs in a zener diode at low reverse voltages.
A Zener allows current to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage, "Zener knee voltage", "Zener voltage", “Avalanche point", or “Peak inverse voltage”
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This book is dedicated to the guys who love electronic than anything else in the world being the one!!
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1. When a P-type semiconductor is joined with an N-type semiconductor, a PN junction is formed known as a semiconductor diode.
2. Semiconductor diodes are widely used as rectifiers to convert alternating current (AC) input into direct current (DC) output.
3. In a PN junction, the diffusion of majority carriers across the junction leaves behind charged acceptor and donor ions which form an electric field called the depletion region or space charge region.
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A diode is a two-terminal electronic component that allows current to flow in only one direction. It is used to convert alternating current to direct current through a process called rectification. Diodes come in various types including laser diodes, light emitting diodes, Zener diodes, and silicon diodes. Rectification uses diodes to convert AC to DC through either half-wave or full-wave rectification circuits. Zener diodes are used in the reverse bias mode as voltage regulators. Photodiodes generate current or voltage when illuminated by light and are used in applications like machine vision, range finding, and medical diagnostics.
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This document presents an agenda for a lecture on diodes. It will introduce basic diode concepts like their composition and circuit models. It will discuss applications of diodes in circuits and different types of diodes like Zener diodes and light emitting diodes. The lecture will show real diode components and their usage. It will conclude with a summary of diodes and thank sources in a bibliography.
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Semiconductor diodes are made from semiconductors like silicon and germanium. Semiconductors have properties between conductors and insulators due to covalent bonding. Their electrons exist in energy levels/bands. Doping semiconductors with impurities creates n-type and p-type materials. A semiconductor diode consists of a p-n junction, where a depletion region inhibits current flow. In forward bias, current flows easily but in reverse bias, it does not due to the depletion region. Ideal diodes switch perfectly between on and off states while practical diodes have small leakage currents.
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This presentation discusses the tunnel diode. It begins with an introduction stating that the tunnel diode was invented in 1958 by Dr. Leo Esaki and is a heavily doped PN junction. The description explains that the tunnel diode exhibits negative resistance, where increasing the voltage causes the current to decrease. It has a highly doped PN junction with a doping density about 1000 times greater than an ordinary diode. The working explains the quantum tunneling effect that occurs, where electrons tunnel through the reduced potential barrier, causing a negative resistance region in the current-voltage characteristics. Applications include use as an ultra-high speed switch and in logic memory storage due to the tunneling effect.
Tunnel Diode (Esaki Diode )
A tunnel diode or Esaki diode is a type of semiconductor that is capable of very fast operation, well into the microwave frequency region, made possible by the use of the quantum mechanical effect called tunneling.
It was invented in August 1957 by Leo Esaki when he was with Tokyo Tsushin Kogyo, now known as Sony. In 1973 he received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently came up with the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it.[1]
These diodes have a heavily doped p–n junction only some 10 nm (100 Å) wide. The heavy doping results in a broken bandgap, where conduction band electron states on the n-side are more or less aligned with valence band hole states on the p-side
Tunnel diodes were first manufactured by Sony in 1957[2] followed by General Electric and other companies from about 1960, and are still made in low volume today.[3] Tunnel diodes are usually made from germanium, but can also be made from gallium arsenide and silicon materials. They are used in frequency converters and detectors.[4] They have negative differential resistance in part of their operating range, and therefore are also used as oscillators, amplifiers, and in switching circuits using hysteresis.
Figure 6: 8–12 GHz tunnel diode amplifier, circa 1970
In 1977, the Intelsat V satellite receiver used a microstrip tunnel diode amplifier (TDA) front-end in the 14 to 15.5 GHz band. Such amplifiers were considered state-of-the-art, with better performance at high frequencies than any transistor-based front end.[5]
The highest frequency room-temperature solid-state oscillators are based on the resonant-tunneling diode (RTD).[6]
There is another type of tunnel diode called a metal–insulator–metal (MIM) diode, but present application appears restricted to research environments due to inherent sensitivities.[7] There is also a metal–insulator–insulator–metal MIIM diode which has an additional insulator layer. The additional insulator layer allows "step tunneling" for precise diode control.[8]
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Miss goodheart created a PowerPoint to test out the Slideshare tool, which was introduced to her by Sharon Tonner on January 20th, 2011.
Oc ppt
This document discusses semiconductor lasers for optical communication. It was developed in 1962 by Robert Hall and consists of complex multi-layer structures. Semiconductor lasers have advantages like small size, low cost, simple construction and high efficiency. However, they also have disadvantages such as relatively low power production and high sensitivity to temperature. Semiconductor lasers find applications in optical communication using fiber optic cables for high-speed data transmission, as well as in medical treatments and as transmitters of digital data.
4 semiconductores modify
Un semiconductor es un material que puede comportarse como un conductor o un aislante dependiendo de factores como el campo eléctrico, la temperatura o la radiación. El semiconductor más usado es el silicio, que tiene una estructura cristalina tetraédrica. Los semiconductores pueden ser intrínsecos, formados solo por el elemento semiconductor puro, o extrínsecos, dopados con pequeñas cantidades de impurezas trivalentes o pentavalentes para crear semiconductores tipo n, con exceso de electrones, o tipo p, con exceso de huecos.
4 semiconductores
Este documento describe los conceptos básicos de los semiconductores. Explica que los semiconductores pueden comportarse como aislantes o conductores dependiendo de la temperatura y la presencia de impurezas. También describe cómo los semiconductores intrínsecos pueden volverse extrínsecos mediante el dopaje con impurezas que crean electrones o huecos extra. Finalmente, distingue entre los semiconductores de tipo P dopados con impurezas aceptoras y los de tipo N dopados con impurezas donadoras.
Mapas progreso matematica_estadisticaprobabilidad
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Tunnel diode(1)
Tunnel diodes have the following key properties:
1. They were invented in 1957 and work by allowing electrons to tunnel through a very narrow p-n junction using the quantum tunneling effect.
2. They have an unusual current-voltage characteristic with a negative-resistance region, which makes them useful for high-frequency oscillators.
3. Their main applications are in high-speed switching, signal detection, and frequency generation due to their ability to operate at frequencies into the microwave range resulting from their fast switching speeds.
Understanding semiconductor diodes
This document discusses semiconductors and semiconductor diodes. It defines semiconductors and describes their properties. It explains how doping semiconductors creates an excess of either electrons or holes, resulting in n-type or p-type materials. It then discusses how a p-n junction diode works, including the formation of a depletion region and the forward and reverse bias connections. The document also covers how diodes can be used for rectification of alternating current into direct current, including half-wave and full-wave rectification, and how a capacitor can smooth the rectified output.
車載用電子部品の品質
車載用電子部品の品質
１．何故、車の品質は厳しいのか？
・人命にかかわる製品：
車は人の命をあずかる製品
であり、ブレーキが利かない、ハンドルが曲がらなかったら
即、死亡事故につながる。
・ブランド：
車載用電子製品は車の一部であり、不良が発生した際は車自体のイメージダウンにつながり、ブランドの信用が低下する。
Single_Electron_Transistor_Aneesh_Raveendran
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Diodos
Este documento describe diferentes tipos de diodos, incluyendo diodos detectores, rectificadores, zener, varactor, emisores de luz (LED), y túnel. Explica sus características principales y usos comunes.
Diodos
Este documento describe los diferentes tipos de diodos, incluyendo diodos detectores que operan a altas frecuencias, diodos rectificadores que solo conducen en polarización directa, diodos emisores de luz (LED) que emiten luz de diferentes colores cuando se les aplica un voltaje, fotodiodos que producen corriente inversa proporcional a la luz incidente, y diodos estabilizadores que estabilizan bajas tensiones trabajando en polarización directa de manera similar a los diodos Zé
Diodos
Este documento describe diferentes tipos de diodos, incluyendo diodos rectificadores, LED, fotodiodos, diodos de avalancha y diodos Zener. Los diodos rectificadores se usan para rectificar corriente alterna en fuentes de alimentación, mientras que los LED emiten luz cuando se aplica corriente eléctrica. Los fotodiodos detectan luz visible e infrarroja, y los diodos de avalancha y Zener funcionan en zonas de ruptura o inversión para controlar el voltaje.
Dispositivos ElectróNicos
Este documento presenta una introducción a diferentes dispositivos electrónicos de potencia como diodos, SCR, GTO, BJT, MOSFET e IGBT. Describe brevemente la estructura, características y áreas de funcionamiento de cada dispositivo, destacando sus ventajas relativas para aplicaciones de potencia media y alta. El documento proporciona información fundamental sobre los principales componentes electrónicos utilizados en circuitos y sistemas de potencia.
Características de diodos
Este documento presenta las características y especificaciones de varios tipos de diodos, incluyendo diodos de avalancha, diodos Zener, diodos láser, fotodiodos, diodos varactor, diodos LED y su aplicación como indicadores. Proporciona detalles técnicos como corriente máxima, voltaje, longitud de onda, potencia de salida y más.
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Tunnel diode sunum
- 2. THE TUNNEL DİODE The tunnel diode is a form of very fast semiconductor diode that can operate well into the microwave radio frequency region. The tunnel diode’s other name is Esaki Diode. TUNNEL DIODES: CIRCUIT SYMBOL:
- 3. Advantages and Disadvantages of Tunnel Diodes Advantages: Very high speed Longevity Disadvantages: Reproducibility Low peak to valley current ratio
- 4. Tunnel Diode Theory Basics The characteristic curve for a tunnel diode shows an area of negative resistance. Tunnel diode I-V characteristic
- 5. Normal diode current Tunneling current Excess current Tunnel Diode Characteristic
- 6. Tunnel Diode Structure Basics A further difference is that the depletion region, the area between the p-type and n-type areas, where there are no carriers is very narrow.
- 7. Backward Diode Basics In the forward direction the tunnelling effect is much reduced and it follows virtually the same characteristic as a normal PN junction diode.
- 8. Backward Basics A backward diode is a form of tunnel diode where one side of the junction is less heavily doped than the other. The fact that the diode can be used 'backward' way round gives rise to its name.
- 9. Breakdown diode circuit symbol Despite the operation of the breakdown diode, its circuit symbol is based on that for the standard diode, but has 'tails' added to the bar element visible either side of the bar to indicate its operation and to differentiate it from other forms of PN junction diode.
- 10. Backward diode applications The characteristics of the backward diode make it suitable for a limited number of applications where other diodes may not perform as well. 1. Detector 2. Rectifier 3. Switch
- 11. Backward Diode Tutorial The backward diode uses much the same structure as the tunnel diode, but it has a different IV characteristic making it useful in a variety of applications.
- 12. Basics A backward diode is a form of tunnel diode where one side of the junction is less heavily doped than the other.
- 14. THANK YOU DOGANCAN ÇUBUK GÜLTEKİN ÇELİK YUSUF AKTAŞ KADİR ÖZSAATÇİ