2. Prepared For
TAWSIF IBNE ALAM
Faculty of EEE Department
Group members :-
Name ID
KABIR, SHARIF RAIHAN 12-21365-2
HASAN, ASIF MAHMUD 12-21535-2
ALAM, MIM SHAH NEWAJ 12-21951-2
4. INTRODUCTION
• Multi-threshold is one kind of CMOS which is a deviation in
the chip technology.
• It has transistor with multiple threshold voltages in order to
optimize delay or power.
• It can achieve a lower threshold voltage, and therefore, higher
performance as well as smaller standby leakage current.
• Simple threshold of making MOS with multiple threshold
voltages is to apply different bias voltage to the body or
substrate terminal of the transistors.
• It enables high performance and low power operation, but
requires sequential circuit structures that can retain state
during standby modes.
7. METHODOLOGY:
• The MTCMOS technique uses a different apart from conventional
sleep transistor approach for reducing power dissipation.
• The MTCMOS technique reduces the power dissipation by
maintaining the different properties which are responsible for it;
some of them are as electron movement in ground and supply
wire.
• This technique uses sleep transistor but with different
characteristics, it uses a set of high threshold sleep transistors i.e.
PMOS and NMOS .
• When this high threshold transistors are turned off then a very low
sub threshold leakage current passes from Vdd to ground.
• In the case of both the input are different it gives the strong high
output wher as n the case of both logic high and low it give a strong
low output.