The document discusses metal-semiconductor junctions, including: 1. The structure of the junction and how energy bands evolve with the metal and semiconductor coming together. Surface states at the semiconductor surface pin the Fermi level. 2. Applying a voltage bias changes the potential barrier and depletion region width, affecting current flow. 3. Current is modeled as thermionic emission of majority carriers over the altered potential barrier, with the net current dependent on bias voltage. Models of the barrier transit rate R further develop current expressions.