SPICE MODEL of SSM3J16FU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: SSM3J16FU
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
U1
SSM3J16FU
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
- Id(mA) Error(%)
Measurement Simulation
0.5 0.0111 0.0116 4.505
1 0.0156 0.0154 -1.282
2 0.0182 0.0179 -1.648
5 0.0333 0.0333 0.000
10 0.0500 0.0493 -1.400
20 0.0667 0.0692 3.748
50 0.1087 0.1099 1.104
100 0.154 0.155 0.649
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
-1.0A
-1.0mA
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
SSM3J16FU
V2
-3
V1
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
Simulation Result
- VGS(V)
- ID(mA) Error (%)
Measurement Simulation
0.5 1 1.019 1.900
1 1.08 1.057 -2.130
2 1.15 1.11 -3.478
5 1.3 1.22 -6.154
10 1.4 1.343 -4.071
20 1.55 1.516 -2.194
50 1.85 1.86 0.541
100 2.3 2.248 -2.261
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
-10mA
-5mA
0A
0V -50mV -100mV -150mV
I(V2)
V_V3
Evaluation circuit
VD_Sense
0Vdc
U1
SSM3J16FU
VDS
0Vdc
VGS
-4Vdc
0
Simulation Result
ID=-10mA, VGS=-4V Measurement Simulation Error (%)
R DS (on)  6 5.999 -0.017
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
-10V
-5V
0V
0 0.2n 0.4n 0.6n 0.8n 1.0n 1.2n
V(W1:4)
Time*1mA
Evaluation circuit
ION = 0uA
IOFF = 1mA U1
SSM3J16FU
W
-
+
W1 D1 I2
I1 I1 = 0 Dbreak -77.27m
I2 = 1m
TD = 0
TR = 10n V1
TF = 10n
PW = 200u
PER = 500u -17
0
Simulation Result
VDD=-17V,ID=-77.27mA
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nC) 0.128 0.1282 0.156
Qgd(nC) 0.328 0.3284 0.122
Qg(nC) 1.2 0.9801 -18.325
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Gate Charge Characteristic Reference
10
VDD=-17V
8
GATE VOLTAGE -Vg
6
4
2
0
0 0.4 0.8 1.2
GATE CHARGE Qg(nc)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.1 12 11.92 -0.667
0.2 11.5 11.55 0.435
0.5 10.5 10.6 0.952
1 9.5 9.45 -0.526
2 8 8 0
5 6 5.95 -0.833
10 4.5 4.52 0.444
20 3.4 3.4 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Switching Time Characteristic
Circuit Simulation result
-5.0V
-2.5V
0V
1.5us 2.0us 2.5us 3.0us
V(U1:G) V(U1:D)/1.2
Time
Evaluation circuit
R2
L1 300
30nH
U1
SSM3J16FU
R3 L2
PER = 30u
PW = 10u 50 30nH V1
TF = 4n -3Vdc
TR = 4n R1
TD = 2u
V2 = -5 V2 50
V1 = 0
0
Simulation Result
ID=-10mA, VDD=-3V
Measurement Simulation Error(%)
VGS=0/-2.5V
Ton(ns) 130 130 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Output Characteristic
Circuit Simulation result
-250mA
-200mA
-150mA -2.7
-2.5
-100mA
-2.3
-2.1
-50mA -1.9
-1.7
VGS=-1.5 V
0A
0V -0.5V -1.0V -1.5V -2.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
SSM3J16FU
V2
-2
V1
-1.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
250mA
200mA
150mA
100mA
50mA
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
U1
0.01m
SSM3J16FU
VDS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(mA) Measurement Simulation %Error
5 0.615 0.614 -0.163
10 0.645 0.645 0
20 0.68 0.681 0.147
50 0.74 0.741 0.135
100 0.8 0.799 -0.125
200 0.87 0.870 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic
Circuit Simulation Result
80mA
40mA
0A
-40mA
-80mA
14.88us 14.96us 15.04us 15.12us 15.20us 15.28us
I(RL)
Time
Evaluation Circuit
R1
50
V1 = -1.375v V1
V2 = 2.725v U1
TD = 0 SSM3J16FU
TR = 10ns
TF = 10ns
PW = 15us
PER = 100us
0
Simulation Result
Trr(ns) Measurement Simulation Error (%)
Trj (ns) 7 7.007 0.1
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Reverse Recovery Characteristic Reference
Trj=7(ns)
Trb=64(ns)
Conditions:Ifwd=lrev=0.04(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. ESD PROTECTION DIODE Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit
R1
R2
0.01m U1 1G
SSM3J16FU
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

18. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007