SPICE MODEL of TPC8012-H (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8012-H
MANUFACTURER: TOSHIBA
Body Diode (Professional)/ / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
U1
TPC8012-H
Equivalent Circuit
D
S1
- -
+ +
R2
S
R1 10MEG DGD
10M CGD
S2
+ +
- -
Q1
S
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
0.1 0.54100 0.526 -2.773
0.2 0.74100 0.743 0.270
0.5 1.1630 1.168 0.430
1 1.6670 1.645 -1.320
2 2.3530 2.309 -1.870
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
2.0A
1.0A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
TPC8012-H
V2
V1 10
8
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 5.15 5.1615 0.223
0.2 5.3 5.3228 0.430
0.5 5.65 5.6438 -0.110
1 6.05 6.0074 -0.704
2 6.55 6.5248 -0.385
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
800mA
600mA
400mA
200mA
0A
0V 100mV 200mV 300mV 400mV 500mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
TPC8012-H V3
0Vdc
V1
10
0
Simulation Result
ID=0.9A, VGS=10V Measurement Simulation Error (%)
R DS (on)  0.28 0.28 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
16V
12V
8V
4V
0V
0s 4ns 8ns 12ns 16ns 20ns
V(W1:3)
Time*1m
Evaluation circuit
RON = 1.0
ROFF = 1e6
ION = 0
IOFF = 100u
W1
+ I2
-
W D1 1.8
I1 = 0 Dbreak
I1 I2 = 1m U1
TD = 0 TPC8012-H V1
TR = 10n
TF = 10n
PW = 200u
PER = 500u 160
0
Simulation Result
VDD=160V,ID=1.8A Measurement Simulation Error (%)
Qgs (nC) 4.2 4.1915 -0.202
Qgd (nC) 4.6 4.5638 -0.787
Qg (nC) 11.5 11.544 0.383
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 750 746 -0.533
0.2 680 679.5 -0.074
0.5 550 554 0.727
1 440 445 1.136
2 340 339 -0.294
5 230 226 -1.739
10 165 163 -1.212
20 115 116 0.870
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
20V
10V
0V
1.75us 2.00us 2.25us 2.50us
V(U1:4) V(U1:5)/10
Time
Evaluation circuit
L1 R2
50nH
111
L2
V1
30nH
100
V1 = 0 V2 R4
V2 = 10 U1
TD = 2u 50 TPC8012-H
TR = 6n
TF = 7n
PW = 10u
PER = 30u
0
Simulation Result
ID=0.9 A, VDD=100V
Measurement Simulation Error(%)
VGS=0/10V
Ton (ns) 28 28.073 0.261
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
5.0A
7.6
7.3
4.0A
7
3.0A
6.6
2.0A
6
1.0A
VGS=5 V
0A
0V 4V 8V 12V 16V 20V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
Vv ariable
Vstep
U1
TPC8012-H 20
5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 TPC8012-H
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V)
IDR(A) %Error
Measurement Simulation
0.1 0.635 0.636 0.157
0.2 0.67 0.668 -0.299
0.5 0.716 0.714 -0.279
1 0.75 0.752 0.267
2 0.8 0.799 -0.125
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.4us 14.8us 15.2us 15.6us 16.0us 16.4us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.4 V1
V2 = 10.67 U1
TD = 0
TR = 10n DTPC8012-H
TF = 10n
PW = 15u
PER = 100u
0
Simulation Result
Measurement Simulation Error (%)
Trj(ns) 228 228.010 0.004
Trb(ns) 192 193.265 0.659
Trr(ns) 420 421.275 0.304
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=228(ns)
Trb=192(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V 100V
I(R1)
V_V1
Evaluation Circuit
R1 R2
U1 1G
0.01m TPC8012-H
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007