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Device Modeling Report



COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: S3L60
MANUFACTURER: SHINDENGEN




                    Bee Technologies Inc.

      All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                 -1-
DIODE MODEL PARAMETERS

PSpice model
                                    Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                      -2-
Forward Current Characteristic

Circuit Simulation Result

                10A




               1.0A




              100mA
                      0V       0.4V   0.8V    1.2V     1.6V          2.0V   2.4V   2.8V
                           I(R1)
                                                    V_V1
Evaluation Circuit

                                      R1

                                      0.01m



                              V1                           U1
                              0Vdc                         S3L60_P




                                        0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                              -3-
Comparison Graph

Circuit Simulation Result




Simulation Result

                                          Vfwd (V)
             Ifwd (A)                                                   %Error
                            Measurement            Simulation
                     0.1           0.732                  0.727                 -0.69
                     0.2           0.825                  0.826                  0.12
                     0.5           0.968                  0.975                  0.72
                       1           1.117                  1.114                 -0.30
                       2           1.294                  1.293                 -0.11
                       5           1.621                  1.622                  0.08
                      10           1.985                  1.985                 -0.02




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -4-
Capacitance Characteristic

Circuit Simulation Result

              200p



              100p




               10p




              2.0p
              500mV      1.0V                    10V                            100V
                      -I(X_U1.D_D1)/(600V/1u)
Evaluation Circuit                        V(N11503)


                                            V2



                                            0Vdc



                      V1 = 0       V1
                      V2 = 600                                 U1
                      TD = 0                                   S3L60_P
                      TR = 1u
                      TF = 50ns
                      PW = 5us
                      PER = 10us




                                                 0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -5-
Comparison Graph

Circuit Simulation Result




Simulation Result

                                       Cj (pF)
           Vrev (V)                                                       %Error
                            Measurement        Simulation
                    0.5            91.820            94.585                      3.01
                      1            78.510              79.28                     0.98
                      2            63.500            64.407                      1.43
                      5            46.100            46.091                     -0.02
                     10            33.900            34.805                      2.67
                     20            25.140            25.951                      3.23
                     50            16.800            17.466                      3.96
                    100            12.500            12.962                      3.70




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -6-
Reverse Recovery Characteristic

Circuit Simulation Result

             400mA


             300mA


             200mA


             100mA


                -0mA


            -100mA


            -200mA


            -300mA


            -400mA
               19.96us    20.00us         20.04us       20.08us     20.12us
                    I(R1)
                                                     Time
Evaluation Circuit

                                            R1


                                                 50

                        V1 = -9.2V
                        V2 = 10.9V
                        TD = 7ns     V1
                        TR = 15ns                                 U2
                        TF = 12ns                                 S3L60_P
                        PER = 50us
                        PW = 20us




                                                 0



Compare Measurement vs. Simulation

                              Measurement                   Simulation        %Error
          Trj          ns             18.00                         17.41         -3.26
          Trb          ns             16.00                         16.14          0.88
          Trr          ns             34.00                         33.55         -1.31


                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                              -7-
Reverse Recovery Characteristic                                        Reference




                                                     Measurement




Trj =18.00(ns)
Trb= 16.00(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50




                                                        Example




                               Relation between trj and trb




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                           -8-

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SPICE MODEL of S3L60 (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL PART NUMBER: S3L60 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
  • 2. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
  • 3. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V 2.8V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc S3L60_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 0.732 0.727 -0.69 0.2 0.825 0.826 0.12 0.5 0.968 0.975 0.72 1 1.117 1.114 -0.30 2 1.294 1.293 -0.11 5 1.621 1.622 0.08 10 1.985 1.985 -0.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
  • 5. Capacitance Characteristic Circuit Simulation Result 200p 100p 10p 2.0p 500mV 1.0V 10V 100V -I(X_U1.D_D1)/(600V/1u) Evaluation Circuit V(N11503) V2 0Vdc V1 = 0 V1 V2 = 600 U1 TD = 0 S3L60_P TR = 1u TF = 50ns PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 0.5 91.820 94.585 3.01 1 78.510 79.28 0.98 2 63.500 64.407 1.43 5 46.100 46.091 -0.02 10 33.900 34.805 2.67 20 25.140 25.951 3.23 50 16.800 17.466 3.96 100 12.500 12.962 3.70 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
  • 7. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.96us 20.00us 20.04us 20.08us 20.12us I(R1) Time Evaluation Circuit R1 50 V1 = -9.2V V2 = 10.9V TD = 7ns V1 TR = 15ns U2 TF = 12ns S3L60_P PER = 50us PW = 20us 0 Compare Measurement vs. Simulation Measurement Simulation %Error Trj ns 18.00 17.41 -3.26 Trb ns 16.00 16.14 0.88 Trr ns 34.00 33.55 -1.31 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
  • 8. Reverse Recovery Characteristic Reference Measurement Trj =18.00(ns) Trb= 16.00(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-