SPICE MODEL of SSM3K14T (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: SSM3K14T
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.200 2.0400 2.0202 -0.97
0.500 3.7700 3.7500 -0.53
1.000 4.9800 5.0000 0.40
2.000 6.7200 6.8493 1.92
4.000 10.0000 10.2041 2.04
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
10A
1.0A
100mA
0V 1.0V 2.0V 3.0V 4.0V
I(Vsense)
V_VGS
Evaluation circuit
Vsense
U2
SSM3K14T VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 2.220 2.235 0.68
0.200 2.270 2.292 0.98
0.500 2.398 2.392 -0.24
1.000 2.520 2.506 -0.54
2.000 2.700 2.669 -1.16
5.000 3.050 3.005 -1.48
10.000 3.470 3.399 -2.05
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
2.0A
1.8A
1.6A
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0A
0V 12.4mV 24.8mV 37.2mV 49.6mV 62.0mV
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
SSM3K14T VDS
10Vdc
VGS
10Vdc
0
Simulation Result
ID = 2A, VGS = 10V Measurement Simulation Error (%)
R DS (on) m 31 31 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n 11n 12n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
W1
+
I1
- D1 4Adc
U1
W SSM3K14T Dbreak
ION = 0A
I2 IOFF = 1mA
TD = 0
1m VD
I1 = 0 24Vdc
0
Simulation Result
VDD=24V, ID=4A,
Measurement Simulation Error (%)
VGS=4V
Qgs nC 1.800 1.797 -0.167
Qgd nC 2.000 1.971 -1.450
Qg nC 5.000 4.579 -8.420
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error(%)
Measurement Simulation
0.100 181.000 185.000 -2.162
0.200 172.000 171.000 0.585
0.500 151.000 150.000 0.667
1.000 130.000 129.000 0.775
2.000 105.000 107.000 -1.869
5.000 77.000 78.000 -1.282
10.000 60.000 61.000 -1.639
30.000 40.000 39.000 2.564
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
-2V
-4V
4.944us 4.992us 5.040us 5.088us 5.136us
V(2)*2.5 V(3)/1.5
Time
Evaluation circuit
R1 Vsense
L3 L2
2 3
10 30nH 50nH
U1 RL
V1 = 0 R2 SSM3K14T 7.5
V2 = 8 V1 10
TD = 5u
TR = 10n
TF = 10n
PW = 10u VDD
PER = 10m 15Vdc
0 0 0 0
Simulation Result
ID=2A, VDD=15V
Measurement Simulation Error(%)
VGS=0/4V
ton ns 24.00 23.88 0.503
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
10 4.5 4
9.0A
8.0A 3.3
7.0A
6.0A
5.0A
3.0
4.0A
3.0A
2.8
2.0A
VGS=2.6V
1.0A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V3)
V_VD
Evaluation circuit
Vsense
U1
SSM3K14T
VDS
10Vdc
VGS
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. Forward Current Characteristic
Circuit Simulation Result
4.0A
3.5A
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc SSM3K14T
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.10 0.6450 0.6449 -0.01
0.20 0.6800 0.6798 -0.03
0.50 0.7250 0.7253 0.04
1.00 0.7600 0.7602 0.03
2.00 0.7980 0.7948 -0.41
4.00 0.8280 0.8297 0.21
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.96us 1.00us 1.04us 1.08us 1.12us 1.16us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4V V1 U1
V2 = 10.6V SSM3K14T
TD = 7ns
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 12.00 11.89 -0.91
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Measurement
Trj=12.00(ns)
Trb=13.50(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
open open
V1 U1 Ropen
0Vdc SSM3K14T
100MEG
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008