SPICE MODEL of SSM3K15FV (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: SSM3K15FV
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
U1
SSM3K15FV
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(mA) Error (%)
Measurement Simulation
1 0.0200 0.020 0
2 0.0286 0.028 -2.098
5 0.0455 0.045 -1.099
10 0.0625 0.063 0.800
20 0.0870 0.089 2.299
50 0.1429 0.141 -1.330
100 0.2000 0.199 -0.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
0V 1.0V 2.0V 3.0V 4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
SSM3K15FV
3
V1
3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(mA) Error (%)
Measurement Simulation
1 1.43 1.4831 3.713
2 1.5 1.5256 1.707
5 1.62 1.6100 -0.617
10 1.72 1.7051 -0.866
20 1.88 1.8397 -2.144
50 2.15 2.1068 -2.009
100 2.45 2.4081 -1.710
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
10mA
5mA
0A
0V 10mV 20mV 30mV 40mV 50mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
0Vdc
SSM3K15FV
V1
4
0
Simulation Result
ID=10mA, VGS=4V Measurement Simulation Error (%)
R DS (on)  2.2 2.2243 1.105
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0s 0.2ns 0.4ns 0.6ns 0.8ns 1.0ns
V(W1:3)
Time*1m
Evaluation circuit
RON = 1 U1
ROFF = 1e9
ION = 0
IOFF = 10u
W1
+ I2
SSM3K15FV
D1
-
Dbreak
W 0.091
I1 = 0
I1 I2 = 1m
TD = 0 V1
TR = 10n
TF = 10n
PW = 200u
PER = 500u 20
0
Simulation Result
VDD=20V,ID=0.091A Measurement Simulation Error (%)
Qgs (nC) 0.12 0.12 0
Qgd (nC) 0.28 0.28 0
Qg (nC) 1.136 0.862 -24.120
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Gate Charge Characteristic Reference
10
VDD=20V
8
GATE VOLTAGE Vg
6
4
2
0
0 0.4 0.8 1.2
GATE CHARGE Qg(nc)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 10 10 0
0.2 9.5 9.52 0.211
0.5 8.5 8.5 0.000
1 7.5 7.44 -0.800
2 6.3 6.22 -1.270
5 4.7 4.71 0.213
10 3.7 3.73 0.811
20 2.9 2.92 0.690
30 2.6 2.53 -2.692
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Switching Time Characteristic
Circuit Simulation result
10V
5V
0V
1.5us 2.0us 2.5us 3.0us
V(U1:G) V(U1:D)
Time
Evaluation circuit
L1 R2
50nH
500
U1
R3 L2
V1
50
V1 = 0 V2 30nH
V2 = 10 5
SSM3K15FV
TD = 2u R4
TR = 4.5n
TF = 4.5n 50
PW = 10u
PER = 30u
0
Simulation Result
ID=10m A, VDD=5V
Measurement Simulation Error(%)
VGS=0/5V
Ton (ns) 50 49.848 -0.304
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Output Characteristic
Circuit Simulation result
250mA
10 4
200mA 3
2.7
150mA
2.5
100mA
2.3
50mA
VGS=2.1 V
0A
0V 0.5V 1.0V 1.5V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
SSM3K15FV
Vv ariable
Vstep
2
2.1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
200mA
150mA
100mA
50mA
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
SSM3K15FV
0Vdc
U1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(mA) Measurement Simulation %Error
5 0.655 0.656 0.153
10 0.69 0.689 -0.145
20 0.725 0.723 -0.276
50 0.775 0.778 0.387
100 0.835 0.833 -0.240
200 0.91 0.910 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic
Circuit Simulation Result
80mA
40mA
0A
-40mA
-80mA
14.88us 14.92us 14.96us 15.00us 15.04us 15.08us 15.12us 15.16us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -1.3
SSM3K15FV
V2 = 2.76 V1
TD = 0
TR = 10n
TF = 5.7n
PW = 15u
PER = 100u U2
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj (ns) 10 10.003 0.043
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Reverse Recovery Characteristic Reference
Trj=10(ns)
Trb=40(ns)
Conditions:Ifwd=lrev=0.04(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
R2
V1 SSM3K15FV 1G
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

18. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007