SPICE MODEL of RJU002N06 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: RJU002N06
MANUFACTURER: ROHM
REMARK: Body Diode (Model Parameters)/
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
RJU002N06
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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4. Transconductance Characteristics
Circuit Simulation result
VDS=10V
Comparison table
gfs (S)
ID (A) %Error
Measurement Simulation
0.005 0.053 0.055 3.36
0.01 0.086 0.087 1.64
0.02 0.137 0.138 0.52
0.05 0.228 0.229 0.48
0.1 0.330 0.329 -0.18
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5. Vgs-Id Characteristics
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(U1:D)
V_VGS
Evaluation circuit
U1
RJU002N06 V2
VGS 10V
0
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6. Comparison Graph
Circuit Simulation result
VDS=10V
Comparison table
VGS (V)
ID (A) %Error
Measurement Simulation
0.001 1.107 1.157 4.50
0.002 1.152 1.182 2.60
0.005 1.214 1.231 1.36
0.01 1.286 1.286 0.03
0.02 1.374 1.364 -0.69
0.05 1.527 1.520 -0.48
0.1 1.696 1.695 -0.10
0.2 1.955 1.943 -0.65
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Rds(on) Characteristics
Circuit Simulation result
250mA
200mA
150mA
100mA
50mA
0A
0V 100mV 200mV 300mV
I(U1:D)
V_V2
Evaluation circuit
U1
RJU002N06
V2
VGS
4V
0
Test condition: VGS=4(V), ID=200(mA)
Parameter Unit Measurement Simulation %Error
RDS(on) Ω 1.7 1.7 0.0
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8. Output Characteristics
Circuit Simulation result
500mA
4
400mA
3.5
3
300mA
2
200mA
100mA VGS=1.5V
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(U1:D)
V_V2
Evaluation circuit
U1
RJU002N06
V2
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Capacitance Characteristics
Simulation result
Measurement
Simulation
Comparison table
Cbd (pF)
VDS (V) %Error
Measurement Simulation
0.1 26.40 26.22 -0.68
0.2 22.33 22.15 -0.81
0.5 14.00 14.5 3.57
1 8.98 8.55 -4.77
2 3.87 4.05 4.65
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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10. Gate Charge Characteristics
Circuit Simulation result
10V
8V
6V
4V
2V
0V
0 0.5n 1.0n 1.5n 2.0n
V(W1:3)
Time*1mA
Evaluation circuit
U1 D1 ID
RJU002N06 dmod 200mA
I1 = 0 W1
I2 = 1m + VDD
TF = 10n 48V
TR = 10n -
TD = 0 IG W
PER = 1 IOFF = 1mA
PW = 10m ION = 0
0
Test condition: VDD=48(V), VGS=4(V), ID=200(mA)
Parameter Unit Measurement Simulation %Error
Qgs nc 0.12 0.121 0.81
Qgd nc 0.32 0.321 0.45
Qg nc 0.46 0.434 -5.75
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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11. Switching Time Characteristics
Circuit Simulation result
6.0V
4.0V
2.0V
0V
1.92us 1.96us 2.00us 2.04us 2.08us 2.12us
V(L1:1) V(U1:D)/7.5
Time
Evaluation circuit
L2
2 1
U1
30nH
L1 RJU002N06
R1 30nH RL
2 1
300
V1 = 0 10
V2 = 4
TD = 2u V1
TR = 5n VDD
TF = 5n 30
PW = 5u
PER = 500u
0
Test condition: VDD=30(V), VGS=0/4(V), ID=100(mA)
Parameter Unit Measurement Simulation %Error
ton ns 14.000 14.008 0.06
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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12. Body Diode Forward Current Characteristics
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
0V -0.5V -1.0V -1.5V
I(VDS)
V_VDS
Evaluation circuit
U1
VDS RJU002N06
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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13. Comparison Graph
Simulation result
Comparison table
VSD (V)
IDR (A) %Error
Measurement Simulation
0.001 0.613 0.616 0.53
0.002 0.634 0.640 0.90
0.005 0.671 0.671 0.05
0.01 0.695 0.695 0.02
0.02 0.721 0.720 -0.05
0.05 0.754 0.756 0.21
0.1 0.788 0.787 -0.10
0.2 0.825 0.825 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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14. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.84us 0.92us 1.00us 1.08us 1.16us 1.24us
I(R1)
Time
Evaluation circuit
R1
V1 = -9.2V 50
V2 = 10.8V
TD = 0ns V1
TR = 3ns U1
TF = 5ns RJU002N06
PW = 1us
PER = 100us
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 19.80 19.86 0.32
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15. Reverse Recovery Characteristics Reference
Measurement
Trj = 19.8(ns)
Trb = 5.2(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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16. ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
V_VGS
Evaluation circuit
U1
RJU002N06
R1
VGS
1G
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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17. Zener Voltage Characteristics Reference
Measurement
IZ = 100(uA)
VZ = 19.15(V) at IZ=114uA
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