SPICE MODEL of 2SK4026 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: 2SK4026
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
U1
2SK4026
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
0.05 0.294 0.296 0.680
0.1 0.417 0.412 -1.199
0.2 0.571 0.575 0.701
0.4 0.800 0.816 2.000
0.5 0.909 0.906 -0.330
0.8 1.111 1.141 2.700
1 1.250 1.259 0.720
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
1.0A
0.8A
0.6A
0.4A
0.2A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
2SK4026
V1 10
5.8
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.05 3.7 3.743 1.162
0.1 3.9 3.889 -0.282
0.2 4.2 4.096 -2.476
0.4 4.45 4.391 -1.326
0.5 4.55 4.5099 -0.881
0.8 4.8 4.810 0.208
1 5 4.979 -0.420
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
500mA
400mA
300mA
200mA
100mA
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
0Vdc
V1 2SK4026
10
0
Simulation Result
ID=0.5A, VGS=10V Measurement Simulation Error (%)
R DS (on)  6.4 6.4 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0s 2ns 4ns 6ns 8ns 10ns 12ns 14ns 16ns 18ns
V(W1:3)
Time*1m
Evaluation circuit
RON = 1.0 U1
ROFF = 1e6
ION = 0
IOFF = 100u
W1
+ 2SK4026 I2
D1
-
Dbreak
W 1
I1 = 0
I1 I2 = 1m
TD = 0 V1
TR = 10n
TF = 10n
PW = 200u
PER = 500u 400
0
Simulation Result
VDD=400V,ID=1A Measurement Simulation Error (%)
Qgs (nC) 1.2 1.2047 0.392
Qgd (nC) 5.8 5.811 0.190
Qg (nC) 9 8.4492 -6.120
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 255 254.8 -0.078
0.2 235 235.5 0.213
0.5 195 194.5 -0.256
1 155 155 0.000
2 115 115.5 0.435
5 72 72 0.000
10 49 48.5 -1.020
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
20V
10V
0V
1.8us 2.0us 2.2us 2.3us
V(U1:G) V(U1:D)/30
Time
Evaluation circuit
L1 R2
50nH
600
U1
L2
V1
V1 = 0 V2 30nH
V2 = 10 300
TD = 2u R4 2SK4026
TR = 6n
TF = 7n 50
PW = 10u
PER = 30u
0
Simulation Result
ID=0.5 A, VDD=300V
Measurement Simulation Error(%)
VGS=0/10V
Ton (ns) 55.000 55.153 0.278
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
2.0A
1.6A
5.25
5
1.2A
4.75
0.8A
4.5
4.25
0.4A
VGS=4 V
0A
6.8 0V 10V 20V 30V 40V 50V 60V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
2SK4026
Vv ariable
Vstep
50
4.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 0.4V 0.8V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
2SK4026
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) Measurement Simulation %Error
0.01 0.615 0.6126 -0.390
0.02 0.635 0.6363 0.205
0.05 0.665 0.6687 0.556
0.1 0.695 0.6953 0.043
0.2 0.73 0.7253 -0.644
0.5 0.775 0.7769 0.245
1 0.835 0.8347 -0.036
2 0.925 0.9252 0.022
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
13us 14us 15us 16us 17us 18us 19us 20us 21us 22us
I(RL)
Time
Evaluation Circuit
RL
50
V1 = -9.315 V1
V2 = 10.72
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u 2SK4026
U3
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (us) 2.82 2.8282 0.291
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=440(ns)
Trb=2.38(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 50V 100V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
R2
V1 1G
2SK4026
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007