FREE SPICE MODEL of S3K60 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: S3K60
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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2. SPICE MODEL
*$
* P ART NUMBER: S3K60
* M ANUF ACTURER: SHINDENGEN
* VRRM=600,IO=3 A
* All Rights Reserved Copyright ( C) Bee Technologies Inc. 2008
.MODEL DS3K60 D
+ IS=220.18E-6
+ N=4.7950
+ RS=18.724E- 3
+ IKF=3.2507
+ CJO=116.42E-12
+ M=.37144
+ VJ=.3905
+ ISR=0
+ BV=600
+ IBV=10.000E-6
+ TT=75.96E-9
*$
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
DS3K60
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.780 0.763 -2.21
0.2 0.845 0.852 0.83
0.5 0.960 0.977 1.77
1 1.058 1.082 2.27
2 1.204 1.205 0.08
5 1.421 1.426 0.32
10 1.670 1.668 -0.12
20 2.040 2.019 -1.03
50 2.834 2.806 -1.00
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6. Capacitance Characteristic
Circuit Simulation Result
100p
10p
1.0V 10V 100V
I(V2)/(600V/1u)
V(N11503)
Evaluation Circuit
V2
0Vdc
V1 = 0 V1
V2 = 600V D1
TD = 0 DS3K60
TR = 1u
TF = 50ns
PW = 5us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
Vrev (V) %Error
Measurement Simulation
1 72.500 72.978 0.66
2 60.000 59.755 -0.41
5 43.400 44.261 1.98
10 34.200 34.808 1.78
20 26.700 27.174 1.78
50 18.900 19.497 3.16
100 15.600 15.200 -2.56
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8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.92us 20.00us 20.08us 20.16us 20.24us 20.32us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.1V
V2 = 10.8V
TD = 6ns V1
TR = 10ns D1
TF = 1ns DS3K60
PER = 50us
PW = 20us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 29.60 29.11 -1.64
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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9. Reverse Recovery Characteristic Reference
Measurement
Trj =29.60(ns)
Trb= 68.80(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2008
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