SPICE MODEL of SSM3K16FU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SSM3K16FU (Standard+BDS Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: SSM3K16FU
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3. Transconductance Characteristic
Circuit Simulation Result
0.25
0.2
gfs
0.15
0.1
Measurement
Simulation
0.05
0.01 0.03 0.05 0.07 0.09 0.11
ID - Drain Current - A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.010 0.080 0.083 3.750
0.020 0.100 0.105 5.000
0.050 0.175 0.179 2.286
0.100 0.245 0.250 2.041
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4. Vgs-Id Characteristic
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
0.1V 1.0V 2.0V 3.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
SSM3K16FU
Vv ariable
3Vdc 3Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
0.081
0.061
ID - Drain Current - A
0.041
0.021
0.001
0 0.5 1 1.5 2 2.5 3
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.001 1.040 1.043 0.288
0.002 1.070 1.074 0.374
0.005 1.120 1.130 0.893
0.010 1.200 1.202 0.167
0.020 1.270 1.295 1.969
0.050 1.450 1.490 2.759
0.100 1.700 1.705 0.294
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6. Rds(on) Characteristic
Circuit Simulation result
10mA
8mA
6mA
4mA
2mA
0A
0V 5mV 10mV 15mV 20mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
SSM3K16FU
VDS
4Vdc 0Vdc
VGS
0
Simulation Result
ID=10mA, VGS=4V Measurement Simulation Error (%)
R DS (on) 1.500 1.500 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14. Reverse Recovery Characteristic Reference
Trj=23.200(ns)
Trb=31.200(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008