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Device Modeling Report



COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: S3L60
MANUFACTURER: SHINDENGEN




                   Bee Technologies Inc.

     All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                -1-
DIODE MODEL PARAMETERS

PSpice model
                                    Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                      -2-
Forward Current Characteristic

Circuit Simulation Result

               10A




              1.0A




             100mA
                     0V       0.4V   0.8V     1.2V   1.6V        2.0V   2.4V   2.8V
                          I(R1)
                                                 V_V1
Evaluation Circuit

                                      R1

                                      0.01m



                              V1
                              0Vdc                      D1
                                                        DS3L60




                                        0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                               -3-
Comparison Graph

Circuit Simulation Result




Simulation Result

                                     Vfwd (V)
             Ifwd (A)                                                   %Error
                            Measurement     Simulation
                     0.1           0.732           0.727                        -0.69
                     0.2           0.825           0.826                         0.12
                     0.5           0.968           0.975                         0.72
                       1           1.117           1.114                        -0.30
                       2           1.294           1.293                        -0.11
                       5           1.621           1.622                         0.08
                      10           1.985           1.985                        -0.02




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -4-
Capacitance Characteristic

Circuit Simulation Result

               200p



               100p




                10p




               2.0p
               500mV       1.0V                        10V                      100V
                       I(V2)/(600V/1u)
                                               V(N11503)
Evaluation Circuit

                                              V2



                                              0Vdc



                       V1 = 0       V1
                       V2 = 600V                                 D1
                       TD = 0                                    DS3L60
                       TR = 1u
                       TF = 50ns
                       PW = 5us
                       PER = 10us




                                                   0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -5-
Comparison Graph

Circuit Simulation Result




Simulation Result

                                       Cj (pF)
             Vrev (V)                                                   %Error
                            Measurement       Simulation
                     0.5           91.820           94.506                      2.93
                       1           78.510           79.309                      1.02
                       2           63.500           64.459                      1.51
                       5           46.100           46.117                      0.04
                      10           33.900           34.803                      2.66
                      20           25.140           25.931                      3.15
                      50           16.800           17.485                      4.08
                    100            12.500           12.958                      3.66




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -6-
Reverse Recovery Characteristic

Circuit Simulation Result
             400mA


             300mA


             200mA


             100mA


                 -0mA


            -100mA


            -200mA


            -300mA


            -400mA
               19.96us    20.00us          20.04us       20.08us     20.12us
                    I(R1)
Evaluation Circuit                                    Time



                                             R1


                                                  50

                         V1 = -9.1V
                         V2 = 10.8V
                         TD = 12ns    V1
                         TR = 10ns                                 D1
                         TF = 12ns                                 DS3L60
                         PER = 50us
                         PW = 20us




                                                  0




Compare Measurement vs. Simulation

                               Measurement                   Simulation        %Error
           trj          ns                 18.00                     17.59         -2.29



                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                               -7-
Reverse Recovery Characteristic                                        Reference




                                                     Measurement




Trj =18.00(ns)
Trb= 16.00(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50




                                                        Example




                               Relation between trj and trb




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                           -8-

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SPICE MODEL of S3L60 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: S3L60 MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
  • 2. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
  • 3. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V 2.8V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc D1 DS3L60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 0.732 0.727 -0.69 0.2 0.825 0.826 0.12 0.5 0.968 0.975 0.72 1 1.117 1.114 -0.30 2 1.294 1.293 -0.11 5 1.621 1.622 0.08 10 1.985 1.985 -0.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
  • 5. Capacitance Characteristic Circuit Simulation Result 200p 100p 10p 2.0p 500mV 1.0V 10V 100V I(V2)/(600V/1u) V(N11503) Evaluation Circuit V2 0Vdc V1 = 0 V1 V2 = 600V D1 TD = 0 DS3L60 TR = 1u TF = 50ns PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj (pF) Vrev (V) %Error Measurement Simulation 0.5 91.820 94.506 2.93 1 78.510 79.309 1.02 2 63.500 64.459 1.51 5 46.100 46.117 0.04 10 33.900 34.803 2.66 20 25.140 25.931 3.15 50 16.800 17.485 4.08 100 12.500 12.958 3.66 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
  • 7. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.96us 20.00us 20.04us 20.08us 20.12us I(R1) Evaluation Circuit Time R1 50 V1 = -9.1V V2 = 10.8V TD = 12ns V1 TR = 10ns D1 TF = 12ns DS3L60 PER = 50us PW = 20us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trj ns 18.00 17.59 -2.29 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
  • 8. Reverse Recovery Characteristic Reference Measurement Trj =18.00(ns) Trb= 16.00(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-