SPICE MODEL of SSM6J51TU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: SSM6J51TU
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.500 6.250 6.108 -2.269
-1.000 8.130 8.150 0.246
-2.000 10.526 10.684 1.503
-4.000 14.286 13.695 -4.136
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
SSM6J51TU
V1
OPEN
OPEN
OPEN
0Vdc
R1 U4
100MEG
VG VD
1.6Vdc -3Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.010 -0.813 -0.811 -0.303
-0.020 -0.850 -0.862 1.395
-0.050 -0.902 -0.930 3.113
-0.100 -0.950 -0.982 3.344
-0.200 -0.998 -1.020 2.154
-0.500 -1.076 -1.080 0.335
-1.000 -1.153 -1.151 -0.173
-2.000 -1.257 -1.259 0.143
-5.000 -1.479 -1.496 1.149
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Id-Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
SSM6J51TU
V1
OPEN
OPEN
OPEN
0Vdc
R1 U3
100MEG
VG VD
-1.8Vdc -3Vdc
0
0
Simulation Result
ID=1.0A, VGS=1.8V Measurement Simulation Error (%)
R DS (on) 68.7755 m 64.78 m 0.0065
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
0 20n 40n 60n 80n 100n 120n
V(W1:2)
Time*1ms
Evaluation circuit
SSM6J51TU
OPEN
OPEN
OPEN
D1
R1 ION = 0uA U1
IOFF = 1mA I2
100MEG I1 = 0 W Dbreak -4Adc
I1 -
I2 = 1m +
TD = 0
0 TR = 10n W1
TF = 10n V1
PW = 600u -10Vdc
PER = 1000u
0
Simulation Result
VDD=-10V,ID=-4A
Measurement Simulation Error (%)
,VGS=-5V
Qgs 7.500 nC 7.463 nC -0.497
Qgd 10.000 nC 10.088 nC 0.880
Qg 57.000 nC 56.871 nC -0.226
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 115.000 115.700 0.609
0.200 110.000 110.900 0.818
0.500 100.000 99.000 -1.000
1.000 84.000 83.500 -0.595
2.000 63.000 62.650 -0.555
5.000 35.000 35.020 0.057
10.000 20.000 19.500 -2.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
-12V
VDS = 10V VGS = 0/2.5V
-8V
-4V
0V
4.80us 4.90us 5.00us 5.10us 5.20us 5.30us
V(2)*4 V(3)
Time
Evaluation circuit
open
U7 L2 RD
R2
open
100MEG 30nH 5
open
RG L1
0
30nH
-10Vdc
4.7 SSM6J51TU
V1 = 0 V1
V2 = -5 V2
TD = 2u R1
TR = 6n 4.7
TF = 7n
PW = 10u
PER = 30u
0
Simulation Result
ID=2.0A, VDD=-10V
Measurement Simulation Error(%)
VGS=0/-2.5V
ton 57.00 ns 57.11 ns 0.19
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
1.8V
1.6V
1.4V
VGS=1.2V
Evaluation circuit
U7 V1
open open
0Vdc VD
open
R2 -10Vdc
100MEG SSM6J51TU
VG
-2.5Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Output Characteristics Reference
1.8V
1.6V
1.4V
VGS=1.2V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
U4
OPEN
OPEN
R2
OPEN
R1
0.01m
100MEG SSM6J51TU
V1
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.010 0.391 0.394 0.730
0.020 0.421 0.419 -0.476
0.050 0.450 0.450 0.024
0.100 0.477 0.476 -0.275
0.200 0.503 0.503 0.025
0.500 0.544 0.546 0.344
1.000 0.589 0.588 -0.141
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Forward Current Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
U4
OPEN
R2
OPEN
R1
50
V1 = -10 V2
100MEG V2 = 10.6 SSM6J51TU
TD = 0
TR = 10n
TF = 10n
0 PW = 20u
PER = 50u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 13.600 ns 13.590 ns -0.074
trb 63.200 ns 63.063 ns -0.217
trr=trj+trb 76.800 ns 76.650 ns -0.195
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

17. Reverse Recovery Characteristic Reference
Trj=13.6(ns)
Trb=63.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

18. Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
U4
OPEN OPEN
OPEN
OPEN OPEN
R2
R1
0.01m
100MEG SSM6J51TU
V1
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

19. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005