SPICE MODEL of TK15H50C (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: TK15H50C
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
U1
TK15H50C
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
0.5 2.1740 2.212 1.748
1 3.0300 3.096 2.178
2 4.1670 4.329 3.888
5 6.6670 6.658 -0.135
10 9.0910 9.149 0.638
15 10.714 10.965 2.343
20 12.500 12.430 -0.560
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
20A
10A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
TK15H50C
V1 20
10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.5 4.2 4.1550 -1.071
1 4.5 4.3473 -3.393
2 4.8 4.6225 -3.698
5 5.3 5.1793 -2.277
10 5.9 5.8243 -1.283
15 6.35 6.3318 -0.287
20 6.7 6.7680 1.015
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
6.0A
4.0A
2.0A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
0Vdc
TK15H50C
V1
10
0
Simulation Result
ID=7A, VGS=10V Measurement Simulation Error (%)
R DS (on)  0.33 0.33 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
14V
12V
8V
4V
0V
0 20n 40n 60n 80n
V(W1:3)
Time*1mA
Evaluation circuit
RON = 1.0
ROFF = 1e6
ION = 0 U1
IOFF = 100u TK15H50C
W1
+ I2
D1
-
Dbreak
W 15
I1
I1 = 0
I2 = 1m V1
TD = 0
TR = 10n 400
TF = 10n
PW = 300u
PER = 500u
0
Simulation Result
VDD=400V,ID=15A Measurement Simulation Error (%)
Qgs (nC) 15 15.065 0.433
Qgd (nC) 14 14.030 0.214
Qg (nC) 48 40.258 -16.129
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 2600 2605 0.192
0.2 2450 2450 0
0.5 2100 2090 -0.476
1 1700 1700 0.000
2 1250 1260 0.800
5 750 750 0
10 480 470 -2.083
20 282 285 1.064
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
20V
10V
0V
1.50us 1.75us 2.00us 2.25us 2.50us
V(U1:G) V(U1:D)/21
Time
Evaluation circuit
L1 R2
50nH
U1 30
L2 TK15H50C
V1
30nH
210
V1 = 0 V2 R4
V2 = 10
TD = 2u 50
TR = 6n
TF = 7n
PW = 10u
PER = 30u
0
Simulation Result
ID=7A, VDD=210V
Measurement Simulation Error(%)
VGS=0/10V
Ton (ns) 90 90.129 0.143
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
20A
10
16A
12A 6
5.75
8A 5.5
5.25
4A 5
4.75
4.5
VGS=4 V
0A
0V 10V 20V 30V 40V 50V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TK15H50C
Vv ariable
Vstep
30
4
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.4V 0.8V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
TK15H50C
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V)
IDR(A) %Error
Measurement Simulation
0.1 0.64 0.638 -0.313
0.2 0.655 0.655 0.000
0.5 0.68 0.681 0.147
1 0.705 0.708 0.426
2 0.745 0.743 -0.268
5 0.81 0.810 0.000
10 0.89 0.889 -0.112
20 1.02 1.021 0.098
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
12us 13us 14us 15us 16us 17us 18us 19us 20us 21us 22us
I(RL)
Time
Evaluation Circuit
RL
50 U1
TK15H50C
V1 = -9.4 V1
V2 = 10.67
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0
Simulation Result
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (us) 2.58 2.5878 0.302
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=1.32(us)
Trb=1.26(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 50V 100V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
R2
TK15H50C
V1 1G
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007