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Device Modeling ReportCOMPONENTS: Power MOSFET (Professional)PART NUMBER: TPCP8401MANUFACTURER: TOSHIBABody Diode (Profess...
MOSFET MODELPSpice model                                       Model description parameter  LEVEL      L        Channel Le...
N-Channel ModelTransconductance CharacteristicCircuit Simulation Result               0.26               0.21             ...
Vgs-Id CharacteristicCircuit Simulation result    1.0A   100mA    10mA   1.0mA        0V                        1.0V      ...
Comparison GraphCircuit Simulation Result                            100                                           Measure...
Rds(on) CharacteristicCircuit Simulation result   10mA    5mA     0A       0V                        10mV                 ...
Gate Charge CharacteristicCircuit Simulation result   5.0V   4.0V   3.0V   2.0V   1.0V     0V          0               0.4...
Reference                         5                                                                          VDD=15V      ...
Capacitance Characteristic                                                       Measurement                              ...
Switching Time CharacteristicCircuit Simulation result   4.0V   3.0V   2.0V   1.0V     0V    9.697us                   10....
Output Characteristic      Circuit Simulation result         250mA         200mA6.8                                       ...
Forward Current CharacteristicCircuit Simulation Result   250mA   200mA   150mA   100mA    50mA      0A        0V         ...
Comparison GraphCircuit Simulation Result                            100                                                 M...
Reverse Recovery CharacteristicCircuit Simulation Result    400mA    200mA       0A   -200mA   -400mA      14.96us        ...
Reverse Recovery Characteristic                                        ReferenceTrj=14(ns)Trb=25.6(ns)Conditions:Ifwd=lrev...
ESD PROTECTION DIODEZener Voltage CharacteristicCircuit Simulation Result   10mA    5mA     0A       0V                   ...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
P-Channel ModelTransconductance CharacteristicCircuit Simulation Result        9.5        8.5        7.5        6.5  gfs  ...
Vgs-Id CharacteristicCircuit Simulation result   -10A    -8A    -6A    -4A    -2A     0A       0V              -0.5V      ...
Comparison GraphCircuit Simulation Result                                            Measurement                          ...
Rds(on) CharacteristicCircuit Simulation result   -2.8A   -2.0A   -1.0A      0A        0V                    -50mV        ...
Gate Charge CharacteristicCircuit Simulation result   -5.0V   -4.0V   -3.0V   -2.0V   -1.0V      0V           0           ...
Capacitance Characteristic                                                   Measurement                                  ...
Switching Time CharacteristicCircuit Simulation result   -10V    -8V    -6V    -4V    -2V     0V     1.9us                ...
Output CharacteristicCircuit Simulation result   -10A                                                                     ...
Forward Current CharacteristicCircuit Simulation Result   100A    10A   1.0A       0V                 0.4V           0.8V ...
Comparison GraphCircuit Simulation Result                           100                                                Mea...
Reverse Recovery CharacteristicCircuit Simulation Result    400mA       0A   -400mA      14.90us                    15.04u...
Reverse Recovery Characteristic                                        ReferenceTrj=15.2(ns)Trb=72.8(ns)Conditions:Ifwd=lr...
Zener Voltage CharacteristicCircuit Simulation Result   10mA    5mA     0A       0V                                       ...
Zener Voltage Characteristic                                         Reference            All Rights Reserved Copyright (c...
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SPICE MODEL of TPCP8401 (Professional+BDP N&P Model) in SPICE PARK

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SPICE MODEL of TPCP8401 (Professional+BDP N&P Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TPCP8401 (Professional+BDP N&P Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Professional)PART NUMBER: TPCP8401MANUFACTURER: TOSHIBABody Diode (Professional) / ESD Protection DiodeREMARK: Silicon N&P Channel MOS Type Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  2. 2. MOSFET MODELPSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  3. 3. N-Channel ModelTransconductance CharacteristicCircuit Simulation Result 0.26 0.21 0.16 gfs 0.11 0.06 Measurement Simulation 0.01 0 20 40 60 80 100 ID(mA)Comparison table gfs Id(mA) Error (%) Measurement Simulation 1 0.030 0.029 -3.333 2 0.040 0.040 0 5 0.063 0.064 1.587 10 0.090 0.091 1.111 20 0.133 0.128 -3.759 50 0.200 0.203 1.500 100 0.294 0.287 -2.381 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  4. 4. Vgs-Id CharacteristicCircuit Simulation result 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V I(V3) V_V1Evaluation circuit V3 0Vdc OPEN OPEN U1 V2 TPCP8401 R1 5 V1 1G 2 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  5. 5. Comparison GraphCircuit Simulation Result 100 Measurement Simulation ID - Drain Current (mA) 10 1 0 1 2 3 VGS - Gate to Source Voltage - VSimulation Result VGS(V) ID(mA) Error (%) Measurement Simulation 1 1 1.0373 3.730 2 1.05 1.0668 1.600 5 1.15 1.1254 -2.139 10 1.22 1.1914 -2.344 20 1.32 1.2847 -2.674 50 1.5 1.47 -2.000 100 1.7 1.6790 -1.235 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  6. 6. Rds(on) CharacteristicCircuit Simulation result 10mA 5mA 0A 0V 10mV 20mV 30mV I(V2) V_V3Evaluation circuit V2 0Vdc OPEN V3 OPEN U1 TPCP8401 0Vdc V1 R1 4 1G 0 0Simulation Result ID=10mA, VGS=4V Measurement Simulation Error (%) R DS (on) 1.5  1.5577  3.847 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  7. 7. Gate Charge CharacteristicCircuit Simulation result 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0 0.4n 0.8n 1.2n 1.6n 2.0n V(W1:3) Time*1mAEvaluation circuit RON = 1.0 ROFF = 1e6 ION = 0 IOFF = 100u D1 Dbreak W1 OPEN + I2 - W 0.1 I1 R1 I1 = 0 I2 = 1m V1 1G TD = 0 TR = 10n 15 OPEN TF = 10n U1 PW = 300u PER = 500u TPCP8401 0 0Simulation Result VDD=15V,ID=0.1A Measurement Simulation Error (%) Qgs 0.12 nC 0.1196 nC -0.333 Qgd 0.304 nC 0.299 nC -1.645 Qg 0.8 nC 0.816 nC 2.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  8. 8. Reference 5 VDD=15V 4 GATE VOLTAGE Vg 3 2 1 0 0 0.4 0.8 1.2 1.6 2 GATE CHARGE Qg(nc) All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  9. 9. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 7.2 7.19 -0.139 0.2 7 7 0 0.5 6.5 6.53 0.462 1 6 6 0.000 2 5.4 5.37 -0.556 5 4.5 4.51 0.222 10 3.9 3.88 -0.513 20 3.3 3.32 0.606 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  10. 10. Switching Time CharacteristicCircuit Simulation result 4.0V 3.0V 2.0V 1.0V 0V 9.697us 10.000us 10.400us 10.700us V(VOUT)/1.2 V(VGS) TimeEvaluation circuit VOUT Vsense L3 RL 3 OPEN 30nH 300 OPEN L4 VGS U1 C1 R6 30nH VD TPCP8401 100u 3Vdc 1G R5 50 0 0 0Simulation Result ID=10m A, VDD=3V Measurement Simulation Error(%) VGS=0/2.5V ton 70.000 ns 72.416 ns 3.451 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  11. 11. Output Characteristic Circuit Simulation result 250mA 200mA6.8 1.9 V 150mA 1.7 V 100mA 1.5 V 50mA VGS=1.3 V 0A 0V 0.5V 1.0V 1.5V 2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc OPEN OPEN U1 V2 TPCP8401 V1 2 R1 1G 1.3 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  12. 12. Forward Current CharacteristicCircuit Simulation Result 250mA 200mA 150mA 100mA 50mA 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(R1) V_V1Evaluation Circuit R1 0.01m OPEN V1 U1 0Vdc TPCP8401 R2 1G OPEN 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  13. 13. Comparison GraphCircuit Simulation Result 100 Measurement Simulation Drain reverse current IDR(mA) 50 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Source-Drain voltage VSD(V)Simulation Result VSD(V) Ifwd(mA) Measurement Simulation %Error 5 0.6 0.601 0.167 10 0.65 0.646 -0.615 20 0.69 0.694 0.580 50 0.765 0.763 -0.261 100 0.825 0.826 0.121 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  14. 14. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 200mA 0A -200mA -400mA 14.96us 15.00us 15.04us 15.08us 15.12us 15.16us I(RL) TimeEvaluation Circuit RL 50 U1 V1 = -9.2 V1 V2 = 10.9 D8401_N TD = 0 TR = 10n TF = 10n PW = 15u PER = 100u 0Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 14 14.001 0.007 Trb(ns) 25.6 25.594 -0.023 Trr(ns) 39.6 39.595 -0.013 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  15. 15. Reverse Recovery Characteristic ReferenceTrj=14(ns)Trb=25.6(ns)Conditions:Ifwd=lrev=0.02(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  16. 16. ESD PROTECTION DIODEZener Voltage CharacteristicCircuit Simulation Result 10mA 5mA 0A 0V 25V 50V I(R1) V_V1Evaluation Circuit R1 0.01m OPEN U1 TPCP8401 R2 R3 V1 0Vdc 1G 1G OPEN 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  17. 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  18. 18. P-Channel ModelTransconductance CharacteristicCircuit Simulation Result 9.5 8.5 7.5 6.5 gfs 5.5 4.5 3.5 Measurement Simulation 2.5 0 0.4 0.8 1.2 1.6 2 ID(A)Comparison table gfs - Id(mA) Error(%) Measurement Simulation 0.2 2.857 2.985 4.480 0.5 4.717 4.505 -4.494 1 6.173 6.452 4.520 2 8.696 8.969 3.139 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  19. 19. Vgs-Id CharacteristicCircuit Simulation result -10A -8A -6A -4A -2A 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V I(V3) V_V1Evaluation circuit V3 0Vdc U1 OPEN V2 OPEN R1 -5 OPEN OPEN 1G V1 TPCP8401 -3 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  20. 20. Comparison GraphCircuit Simulation Result Measurement Simulation 1.8 1.4 ID - Drain Current (A) 1 0.6 0.2 0 1 2 3 VGS - Gate to Source Voltage - VSimulation Result - VGS(V) - ID(mA) Error (%) Measurement Simulation 0.2 1.1 1.1027 0.245 0.5 1.17 1.1857 1.342 1 1.25 1.28 2.400 2 1.35 1.4131 4.674 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  21. 21. Rds(on) CharacteristicCircuit Simulation result -2.8A -2.0A -1.0A 0A 0V -50mV -100mV -150mV -200mV I(V2) V_V3Evaluation circuit V2 0Vdc U1 V3 OPEN 0Vdc V1 R1 -4.5 1G TPCP8401 OPEN 0 0Simulation Result ID=-2.8A, VGS=-4.5V Measurement Simulation Error (%) R DS (on) 31.000 m 31.761 m 2.455 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  22. 22. Gate Charge CharacteristicCircuit Simulation result -5.0V -4.0V -3.0V -2.0V -1.0V 0V 0 8n 16n 24n 32n 40n V(W1:4) Time*1mAEvaluation circuit U1 W OPEN - + I2 D1 W1 Dbreak -5.5 IOFF = 100uA R1 I1 TD = 0 ION = 0 TF = 10n ROFF = 1e6 TPCP8401 1G PW = 200u RON = 1.0 V1 OPEN PER = 500u I1 = 0 I2 = 1m -10 TR = 10n 0 0Simulation Result VDD=-10V,ID=-5.5A Measurement Simulation Error (%) ,VGS=-5V Qgs(nC) 5.5 5.4732 -0.487 Qgd(nC) 4.5 4.6618 3.596 Qg(nC) 20.5 20.547 0.229 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  23. 23. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) - VDS(V) Error(%) Measurement Simulation 0.1 300 298 -0.667 0.2 270 273 1.111 0.5 220 218 -0.909 1 170 173 1.765 2 130 127 -2.308 5 80 81 1.250 10 55 56 1.818 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  24. 24. Switching Time CharacteristicCircuit Simulation result -10V -8V -6V -4V -2V 0V 1.9us 2.0us 2.1us 2.2us V(U1:5) V(U1:2)/1.2 TimeEvaluation circuit L1 R2 50nH 2.1 OPEN L2 U1 30nH V1 V1 = 0 V2 R1 V2 = -5 R4 TD = 2u -6 1G TR = 4n 4.7 OPEN TF = 4n PW = 10u PER = 30u TPCP8401 0 0Simulation Result ID=-2.8 A, VDD=-6V Measurement Simulation Error(%) VGS=0/-5V Ton(ns) 16 16.039 0.244 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  25. 25. Output CharacteristicCircuit Simulation result -10A -1.9V -8A -1.8V -6A -1.7V -1.6V -4A VGS=-1.4V -2A 0A 0V -2.0V -4.0V -5.0V I(V3) V_V2Evaluation circuit V3 0Vdc U1 OPEN V2 OPEN V1 -5 R1 OPEN OPEN 1G -1.4 TPCP8401 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  26. 26. Forward Current CharacteristicCircuit Simulation Result 100A 10A 1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(R1) V_V1Evaluation Circuit R1 0.01m U1 OPEN V1 0Vdc R2 1G TPCP8401 OPEN 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  27. 27. Comparison GraphCircuit Simulation Result 100 Measurement Simulation Drain reverse current IDR(A) 10 1 0 0.4 0.8 1.2 1.6 2 Source-Drain voltage VSD(V)Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 1 0.67 0.675 0.746 2 0.73 0.727 -0.411 5 0.82 0.818 -0.244 10 0.92 0.922 0.217 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  28. 28. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 0A -400mA 14.90us 15.04us 15.20us 15.30us I(RL) TimeEvaluation Circuit RL 50 U1 D8401_P V1 = -9.45 V1 V2 = 10.6 TD = 0 TR = 10n TF = 10n PW = 15u PER = 100u 0Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 15.2 15.2 0 Trb(ns) 72.8 72.842 0.058 Trr(ns) 88 88.042 0.048 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  29. 29. Reverse Recovery Characteristic ReferenceTrj=15.2(ns)Trb=72.8(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  30. 30. Zener Voltage CharacteristicCircuit Simulation Result 10mA 5mA 0A 0V 25V 50V I(R1) V_V1Evaluation Circuit R1 U1 0.01m OPEN R2 R3 V1 0Vdc TPCP8401 1G 1G OPEN 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  31. 31. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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