SPICE MODEL of IDY10S120 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDY10S120
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
PIN1
PIN2 CASE
PIN3
U1
IDY 10S120
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
10A
8A
6A
4A
2A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
U1
IDY 10S120
V1
R2
1G
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
10
Measurement
Simulation
8
Forword Current, I F (A)
6
4
2
0
0 1 2 3 4 5
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.880 0.878 -0.28
0.2 0.915 0.909 -0.70
0.5 0.980 0.972 -0.87
1 1.050 1.055 0.46
2 1.200 1.203 0.28
5 1.610 1.619 0.56
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV
I(R1)
V_V1
Evaluation circuit
R1
U1
0.01
IDY 10S120
V1
R2
1e12
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
100
Measurement
Simulation
10
Reverse Current, IR (uA)
1
0.1
0.01
0.001
200 400 600 800 1000 1200
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
200 8.00E-03 8.04E-03 0.50
500 4.80E-02 4.58E-02 -4.54
800 3.12E-01 3.27E-01 4.90
1200 4.30E+00 4.20E+00 -2.35
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Junction Capacitance Characteristic
Circuit Simulation result
350p
300p
250p
200p
150p
100p
50p
0
1.0V 10V 100V 1.0KV
I(V2)/(1200V/1u)
V(R)
Evaluation circuit
V2
R
U1
IDY 10S120
0
V1 = 0 V1
V2 = 1200
TD = 0
TR = 1us
TF = 100ns
PW = 100us R1
PER = 10m 1G
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
350
Measurement
300 Simulation
250
Capacitance, C (pF)
200
150
100
50
0
1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 250.00 254.78 1.91
2 206.00 209.27 1.59
5 148.00 149.71 1.15
10 112.00 112.35 0.31
20 81.50 82.87 1.68
50 53.50 54.50 1.86
100 39.00 39.45 1.15
200 28.00 28.54 1.94
600 17.80 17.02 -4.39
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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