This document summarizes the specifications and simulation results of a Schottky rectifier diode with part number SG10SC4M. It includes: 1) Details of the diode components and manufacturer. 2) SPICE model parameters used to simulate the diode. 3) Simulation results comparing the forward current, capacitance, and reverse characteristics to measurements. 4) Graphs showing good agreement between simulation and measurement data.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: SG10SC4M
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Circuit Configuration
U1
SG10SC4M
1 2 3
Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
50A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc SG10SC4M
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
FORWARD CURRENT:IF(A)
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.2750 0.2765 0.55
0.2 0.2950 0.2962 0.40
0.5 0.3250 0.3251 0.03
1 0.3500 0.3518 0.52
2 0.3850 0.3870 0.51
5 0.4600 0.4623 0.50
10 0.5600 0.5662 1.11
20 0.7450 0.7562 1.50
50 1.3100 1.2958 -1.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
10n
1.0n
100p
10p
100mV 1.0V 10V 40V
I(V2)/(40V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 40 V1
V1 = 0 U1
TD = 0 SG10SC4M
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 680.000 675.426 -0.67
0.2 620.000 624.494 0.72
0.5 520.000 522.079 0.40
1 430.000 427.105 -0.67
2 330.000 332.351 0.71
5 225.000 226.890 0.84
10 165.000 165.837 0.51
20 120.000 119.820 -0.15
40 89.000 86.430 -2.89
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Characteristic
Circuit Simulation Result
1.0mA
100uA
10uA
1.0uA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m R2
100MEG
V1
0Vdc U1
SG10SC4M
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
REVERSE CURRENT:IR(mA )
0.1
0.01
0.001
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(mA)
VR(V) Error (%)
Measurement Simulation
2 0.0030 0.0030 -0.51
5 0.0040 0.0040 1.04
10 0.0057 0.0057 -0.75
15 0.0075 0.0075 0.07
20 0.0100 0.0101 0.68
25 0.0140 0.0138 -1.27
30 0.0190 0.0193 1.32
35 0.0270 0.0268 -0.62
40 0.0370 0.0370 0.12
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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