SPICE MODEL of IDH12SG60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDH12SG60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

2. Circuit Configuration
U1
IDH12SG60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Forward Current Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH12SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Comparison Graph
Circuit Simulation result
20
Measurement
Simulation
15
Forword Current, IF (A)
10
5
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.986 0.992 0.61
1 1.055 1.047 -0.80
2 1.137 1.136 -0.09
5 1.370 1.373 0.22
10 1.750 1.749 -0.06
20 2.480 2.480 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDH12SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Comparison Graph
Circuit Simulation result
1.E+01
Measurement
Simulation
Reverse Current, IR (A)
1.E+00
1.E-01
1.E-02
1.E-03
100 200 300 400 500
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.400E-03 1.377E-03 -1.64
200 2.450E-03 2.469E-03 0.78
500 1.285E-01 1.228E-01 -4.44
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Junction Capacitance Characteristic
Circuit Simulation result
400p
350p
300p
250p
200p
150p
100p
50p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDH12SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Comparison Graph
Circuit Simulation result
400
Measurement
350 Simulation
300
Capacitance, C (pF)
250
200
150
100
50
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 345.000 347.822 0.82
1 313.000 318.810 1.86
2 275.000 274.913 -0.03
5 210.000 205.599 -2.10
10 160.000 154.076 -3.70
20 120.000 114.055 -4.95
50 82.000 80.690 -1.60
100 64.000 66.405 3.76
200 55.500 58.049 4.59
500 51.570 52.224 1.27
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9