The document provides a device modeling report for a silicon carbide Schottky diode with part number IDD03SG60C. It includes the diode model parameters, simulation results for forward and reverse current characteristics, and junction capacitance. The simulation results show good agreement with manufacturer measurement data, with most comparisons within 5% error.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDD03SG60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

2. Circuit Configuration
U1
IDD03SG60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Forward Current Characteristics
Circuit Simulation result
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDD03SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.953 0.966 1.26
0.2 1.037 1.020 -1.64
0.5 1.156 1.151 -0.42
1 1.344 1.348 0.28
2 1.714 1.724 0.62
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDD03SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.300E-09 1.328E-09 2.15
200 2.520E-09 2.422E-09 -3.89
400 1.800E-08 1.824E-08 1.31
600 2.100E-07 2.092E-07 -0.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Junction Capacitance Characteristic
Circuit Simulation result
70p
60p
50p
40p
30p
20p
10p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDD03SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Comparison Graph
Circuit Simulation result
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 65.579 65.221 -0.55
1 60.000 60.385 0.64
2 52.241 52.235 -0.01
5 41.053 40.437 -1.50
10 32.000 30.714 -4.02
20 23.789 22.668 -4.71
50 16.316 15.502 -4.99
100 12.526 12.262 -2.11
200 9.789 10.266 4.87
500 8.421 8.801 4.51
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9