SPICE MODEL of IDT03S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT03S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDT03S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
6.0A
4.0A
2.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT03S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
6
Measurement
Simulation
Forword Current, IF (A)
4
2
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.970 0.963 -0.77
0.2 1.000 1.000 0.00
0.5 1.100 1.102 0.18
1 1.240 1.240 0.00
2 1.500 1.500 0.00
5 2.250 2.250 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 400V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
U1
V1 IDT03S60C
0
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7. Comparison Graph
Circuit Simulation result
1.E+01
Measurement
Simulation
Reverse Current, IR (A)
1.E+00
1.E-01
1.E-02
1.E-03
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 2.00E-03 2.063E-03 3.15
200 4.00E-03 3.819E-03 -4.53
500 8.60E-02 8.428E-02 -2.00
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8. Junction Capacitance Characteristic
Circuit Simulation result
100p
75p
50p
25p
0
1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600
IDT03S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
100
Measurement
Simulation
75
Capacitance, C (pF)
50
25
0
1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 90.278 89.943 -0.37
2 78.472 78.900 0.55
5 61.000 61.619 1.01
10 47.222 47.102 -0.25
20 35.800 35.582 -0.61
50 24.500 24.301 -0.81
100 18.056 18.391 1.86
200 13.700 14.234 3.90
500 11.152 10.596 -4.99
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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