SPICE MODEL of IDH05S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDH05S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDH05S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH05S60C
0
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5. Comparison Graph
Circuit Simulation result
15
Measurement
Simulation
Forword Current, IF (A)
10
5
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.2 0.950 0.937 -1.41
1 1.050 1.054 0.33
2 1.160 1.165 0.46
5 1.450 1.471 1.42
10 1.950 1.958 0.41
15 2.450 2.438 -0.50
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(R1)
V_V1
Evaluation circuit
R1
10m
V1 U1
IDH05S60C
0
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7. Comparison Graph
Circuit Simulation result
100
Measurement
Simulation
10
Reverse Current, IR (A)
1
0.1
0.01
0.001
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 0.00166 0.00168 1.24
200 0.00338 0.00353 4.50
400 0.06700 0.06863 2.44
600 2.84000 2.70090 -4.90
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8. Junction Capacitance Characteristic
Circuit Simulation result
300p
250p
200p
150p
100p
50p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDH05S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
300
Measurement
Simulation
250
Capacitance, C (pF)
200
150
100
50
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 291.000 288.378 -0.90
0.5 264.000 264.588 0.22
1 239.000 241.208 0.92
5 155.000 153.952 -0.68
10 120.000 115.459 -3.78
50 61.000 59.339 -2.72
100 46.000 47.314 2.86
500 35.000 34.095 -2.59
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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