SPICE MODEL of IDT05S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT05S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDT05S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Forward Current Characteristics
Circuit Simulation result
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT05S60C
0
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5. Comparison Graph
Circuit Simulation result
15
Measurement
Simulation
Forword Current, I F (A)
10
5
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 1.000 1.002 0.20
1 1.057 1.067 0.95
2 1.180 1.179 -0.08
5 1.490 1.484 -0.40
10 1.975 1.971 -0.20
15 2.443 2.450 0.29
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDT05S60C
0
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7. Comparison Graph
Circuit Simulation result
100
Measurement
Simulation
10
Reverse Current, IR (A)
1
0.1
0.01
0.001
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.700E-03 1.695E-03 -0.29
200 3.250E-03 3.324E-03 2.28
500 3.800E-01 3.976E-01 4.63
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8. Junction Capacitance Characteristic
Circuit Simulation result
300p
250p
200p
150p
100p
50p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDT05S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
300
Measurement
Simulation
250
Capacitance, C (pF)
200
150
100
50
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 264.167 263.801 -0.14
1 237.500 239.373 0.79
2 204.167 205.274 0.54
5 154.167 152.429 -1.13
10 118.000 115.815 -1.85
20 88.000 86.634 -1.55
50 60.417 59.829 -0.97
100 44.583 46.750 4.86
200 37.083 37.952 2.34
500 32.143 30.729 -4.40
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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