The document summarizes the modeling of a silicon carbide Schottky diode from Infineon. It provides the part number, manufacturer, and component details. Simulation results are shown for the forward and reverse current characteristics, and junction capacitance characteristic. Tables compare the simulation and measurement values, showing good agreement within 5% error.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT16S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
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2. Circuit Configuration
U1
IDT16S60C
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
25A
20A
15A
10A
5A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT16S60C
0
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5. Comparison Graph
Circuit Simulation result
25
Measurement
Simulation
20
Forword Current, IF (A)
15
10
5
0
0 0.5 1 1.5 2 2.5 3
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.937 0.940 0.38
1 0.982 0.978 -0.41
2 1.026 1.034 0.77
5 1.171 1.174 0.26
10 1.395 1.385 -0.67
25 1.974 1.989 0.79
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDT16S60C
0
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7. Comparison Graph
Circuit Simulation result
10
Measurement
Simulation
Reverse Current, IR (A)
1
0.1
0.01
0.001
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 2.840E-03 2.976E-03 4.80
200 4.850E-03 4.678E-03 -3.55
500 2.800E-01 2.906E-01 3.79
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8. Junction Capacitance Characteristic
Circuit Simulation result
800p
700p
600p
500p
400p
300p
200p
100p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600
IDT16S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
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9. Comparison Graph
Circuit Simulation result
800
Measurement
Simulation
700
600
Capacitance, C (pF)
500
400
300
200
100
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 705.555 711.041 0.78
1 638.888 651.160 1.92
2 555.555 561.037 0.99
5 422.222 418.292 -0.93
10 323.333 311.322 -3.71
20 240.000 228.339 -4.86
50 161.111 157.503 -2.24
100 121.111 126.859 4.75
200 105.555 108.529 2.82
500 100.000 95.499 -4.50
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