SPICE MODEL of IDD04S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDD04S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDD04S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
8.0A
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDD04S60C
0
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5. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 1.07 1.092 2.06
1 1.214 1.196 -1.48
2 1.411 1.387 -1.70
5 1.914 1.929 0.78
8 2.466 2.459 -0.28
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDD04S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
200 1.270E-03 1.270E-03 0.00
400 1.250E-02 1.239E-02 -0.86
600 4.700E-01 4.497E-01 -4.32
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8. Junction Capacitance Characteristic
Circuit Simulation result
200p
175p
150p
125p
100p
75p
50p
25p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDD04S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 152.78 154.009 0.81
1 138.89 139.748 0.62
2 119.45 120.987 1.29
5 93.06 92.839 -0.23
10 72.22 72.578 0.49
20 54.17 55.345 2.18
50 37.50 37.964 1.24
100 28.13 28.280 0.55
200 22.00 21.042 -4.35
600 13.70 13.098 -4.39
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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