SPICE MODEL of IDD08SG60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDD08SG60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDD08SG60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDD08SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
20
Measurement
Simulation
15
Forword Current, IF (A)
10
5
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
1 1.064 1.082 1.63
2 1.164 1.194 2.55
5 1.536 1.501 -2.27
10 2.000 1.991 -0.46
20 2.950 2.953 0.09
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDD08SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
1.E+02
Measurement
Simulation
1.E+01
Reverse Current, I R (A)
1.E+00
1.E-01
1.E-02
1.E-03
100 200 300 400 500
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.75E-03 1.81E-03 3.43
200 3.45E-03 3.60E-03 4.35
500 3.50E-01 3.51E-01 0.29
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Junction Capacitance Characteristic
Circuit Simulation result
300p
250p
200p
150p
100p
50p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDD08SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
300
Measurement
Simulation
250
Capacitance, C (pF)
200
150
100
50
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 265.00 265.22 0.08
1 238.00 240.05 0.86
2 206.00 204.90 -0.53
5 154.00 150.00 -2.60
10 115.00 112.28 -2.37
20 85.00 82.95 -2.41
50 59.00 57.38 -2.75
100 46.00 45.74 -0.57
200 38.00 38.40 1.05
500 33.00 32.80 -0.61
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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