SPICE MODEL of IDH05SG60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDH05SG60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDH05SG60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
8.0A
6.0A
4.0A
2.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH05SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
8
Measurement
7 Simulation
6
Forword Current, I F (A)
5
4
3
2
1
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.2 0.970 0.984 1.43
0.5 1.100 1.078 -2.03
1 1.250 1.212 -3.01
2 1.500 1.464 -2.41
5 2.200 2.188 -0.54
8 2.880 2.901 0.74
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH05SG60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 5.20E-04 5.212E-04 0.22
200 9.00E-04 8.749E-04 -2.79
400 1.15E-02 1.159E-02 0.77
600 3.80E-01 3.834E-01 0.91
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Junction Capacitance Characteristic
Circuit Simulation result
150p
125p
100p
75p
50p
25p
0
100mV 1.0V 10V 100V 600V
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDH05SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
150
Measurement
Simulation
125
Capacitance, C (pF)
100
75
50
25
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 135.00 136.21 0.89
0.2 132.00 132.94 0.71
0.5 122.00 123.28 1.05
1 110.00 111.19 1.08
2 96.50 95.55 -0.99
5 73.00 72.93 -0.10
10 57.00 56.98 -0.04
20 44.00 43.34 -1.50
50 30.00 29.83 -0.58
100 22.50 22.32 -0.82
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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