SPICE MODEL of SDT08S60 (Professional Model) in SPICE PARK
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SPICE MODEL of SDT08S60 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SDT08S60 (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: SDT08S60 MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 SDT0 8S 60 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 SDT08S60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 16 Measurement 14 Simulation 12 Forword Current, IF (A) 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.970 0.971 0.05 1 1.015 1.020 0.49 2 1.100 1.100 0.00 5 1.315 1.312 -0.23 10 1.645 1.644 -0.06 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 100uA 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 SDT08S60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 100 2.100E-09 2.133E-09 1.56 200 1.400E-08 1.356E-08 -3.14 500 4.000E-06 3.837E-06 -4.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 300p 280p 260p 240p 220p 200p 180p 160p 140p 120p 100p 80p 60p 40p 20p 0 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 SDT08S60 TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 280 Measurement Simulation 240 Capacitance, C (pF) 200 160 120 80 40 0 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 1 283.000 283.070 0.02 2 233.000 232.920 -0.03 5 166.000 166.160 0.10 10 123.000 124.000 0.81 20 90.000 90.010 0.01 50 58.000 58.470 0.81 100 42.000 42.000 0.00 200 31.000 30.000 -3.23 500 20.000 19.276 -3.62 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9