Device Modeling of Silicon Carbide Schottky Diode
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SPICE MODEL of SDB06S60 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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Device Modeling of Silicon Carbide Schottky Diode
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: SDB06S60 MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 SDB06S60 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 12A 11A 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 SDB06S60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.5 0.976 0.979 0.31 1 1.040 1.039 -0.10 2 1.140 1.140 0.00 5 1.420 1.414 -0.42 10 1.850 1.850 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 1.0mA 100uA 10uA 1.0uA 100nA 10nA 1.0nA 100V 150V 200V 250V 300V 350V 400V 450V 500V 550V 600V I(U1:K) V_V1 Evaluation circuit V2 0 V1 U1 SDB06S60 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result 1.E+02 Measurement Simulation 1.E+01 Reverse Current, IR (A) 1.E+00 1.E-01 1.E-02 1.E-03 100 150 200 250 300 350 400 450 500 Reverse Voltage , VR (V) Comparison table IR (A) VR (V) %Error Measurement Simulation 100 1.430E-03 1.466E-03 2.52 200 1.000E-02 9.656E-03 -3.44 500 3.100E+00 3.194E+00 3.04 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 250p 200p 150p 100p 50p 0 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 SDB06S60 TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 250 Measurement Simulation 200 Capacitance, C (pF) 150 100 50 0 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 1 220.000 220.351 0.16 2 180.000 180.393 0.22 5 128.300 128.072 -0.18 10 94.000 94.986 1.05 20 68.300 68.923 0.91 50 45.000 44.647 -0.78 100 31.600 31.941 1.08 200 23.300 22.781 -2.23 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9