SPICE MODEL of SDT04S60 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: SDT04S60
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
SDT04S60
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
8.0A
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
SDT04S60
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
6
Measurement
Simulation
5
Forword Current, I F (A)
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.955 0.958 0.31
0.2 1.000 0.993 -0.70
0.5 1.080 1.066 -1.30
1 1.184 1.165 -1.60
2 1.370 1.347 -1.68
5 1.850 1.861 0.59
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
SDT04S60
0
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7. Comparison Graph
Circuit Simulation result
Measurement
Simulation
10
Reverse Current, IR (A)
1
0.1
0.01
0.001
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 2.000E-03 1.953E-03 -2.35
200 1.000E-02 1.036E-02 3.60
400 4.700E-01 4.518E-01 -3.87
600 2.000E+01 2.090E+01 4.50
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8. Junction Capacitance Characteristic
Circuit Simulation result
125p
100p
75p
50p
25p
0
1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 SDT04S60
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
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9. Comparison Graph
Circuit Simulation result
125
Measurement
Simulation
100
Capacitance, C (pF)
75
50
25
0
1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 108.000 108.571 0.53
2 91.000 91.215 0.24
5 67.000 66.129 -1.30
10 49.000 48.939 -0.12
20 34.000 35.161 3.41
50 21.500 22.113 2.85
100 15.100 15.432 2.20
200 11.200 10.722 -4.27
500 6.900 6.600 -4.35
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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