The document provides a device modeling report on the KBU810 diode and bridge rectifier, detailing its parameters, forward current characteristics, capacitance characteristics, and reverse recovery behavior. It includes simulation results compared with measurements, showing % errors for various tests. The report includes circuit simulation data and performance evaluations, with rights reserved by Bee Technologies Inc.

1. Device Modeling Report
COMPONENTS:
DIODE/ BRIDGE RECTIFIER
PART NUMBER: KBU810
MANUFACTURER: WTE POWER SEMICONDUCTORS
MFG.CO.LTD
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0.6V 0.8V 1.0V 1.2V 1.3V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 KBU810
0Vdc
R2
100meg
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
10
Forward Current IF (A)
1
0.1
0.6 0.8 1 1.2
Forward Voltage VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.650 0.642 -1.23
0.2 0.683 0.679 -0.59
0.5 0.725 0.729 0.55
1.0 0.760 0.768 1.05
2.0 0.800 0.807 0.88
5.0 0.860 0.862 0.23
10.0 0.910 0.909 -0.11
20.0 0.970 0.966 -0.41
50.0 1.085 1.074 -1.01
100.0 1.200 1.208 0.67
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
1.0n
100p
10p
100mV 1.0V 10V 100V
I(V2)/(100V/100n)/2
V(rev)
Evaluation Circuit
V2
rev
U1
KBU810
V1 = 0 V1
V2 = 100 R1
TD = 0 1g
TR = 100ns
TF = 10ns
PW = 10us
PER = 10us
0 0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
Junction Capacitance Cj (pF)
100
10
0.1 1 10 100
Reverse Voltage VR (V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 182.000 173.240 -4.81
0.2 133.000 135.611 1.96
0.5 91.500 94.874 3.69
1.0 71.000 73.290 3.23
2.0 58.000 58.806 1.39
5.0 48.500 47.428 -2.21
10.0 43.000 42.548 -1.05
20.0 40.500 39.561 -2.32
50.0 39.000 37.341 -4.25
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
10us 20us 30us 40us 50us 60us 70us 80us 90us 100us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.35V
V2 = 10.7V
TD = 1us U1
TR = 10ns V1 KBU810
TF = 10ns
PW = 50us
PER = 200us
0
Compare Measurement vs. Simulation
Parameter Measurement Simulation %Error
trj us 2.800 2.757 -1.539
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8. Reverse Recovery Characteristic Reference
Measurement
Trj = 2.80(us)
Trb= 3.20(us)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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