SPICE MODEL of IDY15S120 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDY15S120
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
PIN1
PIN2 CASE
PIN3 U1
IDY 15S120
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
20A
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
U1
IDY 15S120
V1
R2
1G
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
20
Measurement
Simulation
15
Forword Current, IF (A)
10
5
0
0 1 2 3 4 5
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.818 0.817 -0.14
0.2 0.850 0.845 -0.60
0.5 0.900 0.899 -0.10
1 0.980 0.968 -1.26
2 1.100 1.087 -1.19
5 1.400 1.414 1.03
10 1.910 1.939 1.50
20 2.990 2.969 -0.69
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV
I(R1)
V_V1
Evaluation circuit
R1
0.01
U1
IDY 15S120
V1
R2
1e12
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
100
Measurement
Simulation
10
Reverse Current, IR (A)
1
0.1
0.01
0.001
200 400 600 800 1000 1200
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
200 0.0110 0.0112 1.36
500 0.0750 0.0719 -4.16
800 0.5140 0.5388 4.82
1200 7.8900 7.5370 -4.47
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Junction Capacitance Characteristic
Circuit Simulation result
500p
450p
400p
350p
300p
250p
200p
150p
100p
50p
0
1.0V 10V 100V 600V
I(V2)/(1200V/1u)
V(R)
Evaluation circuit
V2
R
U1
0
IDY 15 S1 20
V1 = 0 V1
V2 = 1 20 0
TD = 0
TR = 1 us
TF = 1 00 ns
PW = 10 0u s R1
PE R = 1 0 m 1G
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
500
Measurement
450 Simulation
400
Capacitance, C (pF)
350
300
250
200
150
100
50
0
1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 395.000 401.047 1.53
2 323.000 327.758 1.47
5 230.000 230.166 0.07
10 172.000 171.207 -0.46
20 125.000 125.231 0.18
50 80.000 81.131 1.41
100 58.000 57.977 -0.04
200 41.000 41.435 1.06
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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