SPICE MODEL of IDH10S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDH10S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDH10S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
30A
20A
10A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH10S60C
0
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5. Comparison Graph
Circuit Simulation result
30
Measurement
Simulation
Forword Current, IF (A)
20
10
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
1 1.000 0.984 -1.61
2 1.050 1.048 -0.18
5 1.200 1.210 0.86
10 1.450 1.459 0.62
20 1.930 1.939 0.45
30 2.420 2.411 -0.38
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
R1
1m
V1 U1
IDH10S60C
0
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7. Comparison Graph
Circuit Simulation result
100
Measurement
Simulation
10
Reverse Current, IR (A)
1
0.1
0.01
0.001
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 0.00200 0.00200 0.19
200 0.00580 0.00568 -2.10
300 0.02700 0.02751 1.90
600 5.80000 5.77130 -0.49
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8. Junction Capacitance Characteristic
Circuit Simulation result
600p
500p
400p
300p
200p
100p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDH10S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
600
Measurement
Simulation
500
Capacitance, C (pF)
400
300
200
100
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 585.000 572.684 -2.11
0.5 530.000 525.630 -0.82
1 480.000 479.842 -0.03
5 318.000 305.719 -3.86
10 240.000 228.644 -4.73
50 119.000 113.742 -4.42
100 90.000 89.181 -0.91
500 65.000 62.317 -4.13
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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