SPICE MODEL of IDH06S60C (Professional Model) in SPICE PARK
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SPICE MODEL of IDH06S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of IDH06S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDH06S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
- 2. Circuit Configuration U1 IDH06S60C All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
- 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
- 4. Forward Current Characteristics Circuit Simulation result 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 IDH06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
- 5. Comparison Graph Circuit Simulation result 18 Measurement 16 Simulation 14 Forword Current, IF (A) 12 10 8 6 4 2 0 0 1 2 3 4 Forward Voltage, VF (V) Comparison table VF (V) IF (A) %Error Measurement Simulation 0.2 0.900 0.903 0.31 1 0.998 1.008 1.04 2 1.105 1.106 0.11 5 1.380 1.369 -0.78 10 1.800 1.786 -0.76 18 2.430 2.440 0.42 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
- 6. Reverse Current Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation circuit R1 1m V1 U1 IDH06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
- 7. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 100 0.00160 0.00162 1.25 200 0.00500 0.00511 2.20 400 0.10700 0.10340 -3.36 600 2.48000 2.50490 1.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
- 8. Junction Capacitance Characteristic Circuit Simulation result 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 600 IDH06S60C TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
- 9. Comparison Graph Circuit Simulation result 400 Measurement Simulation 300 Capacitance, C (pF) 200 100 0 0.1 1 10 100 1000 Reverse Voltage, VR (V) Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 327.000 322.589 -1.35 0.5 295.000 297.047 0.69 1 268.000 271.517 1.31 5 178.000 173.959 -2.27 10 135.000 130.412 -3.40 50 69.000 66.450 -3.70 100 52.000 53.155 2.22 500 38.000 39.018 2.68 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9