This document summarizes the modeling of a silicon carbide Schottky diode manufactured by Cree. It includes the diode model parameters, simulation results of the forward and reverse current characteristics, and junction capacitance characteristic. The simulation results show good agreement with measurements, with most errors under 5%. Key diode specifications like breakdown voltage and saturation current are also provided.

1. Device Modeling Report
COMPONENTS: SILICON CARBIDE SCHOTTKY DIODE
PART NUMBER: C4D08120A
MANUFACTURER: CREE
REMARK: PROFESSIONAL MODEL
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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2. Circuit Configuration
U2
C4D08120A
DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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3. Forward Current Characteristics
Circuit Simulation result
14A
12A
10A
8A
6A
4A
2A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
C4D08120A
0
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4. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.2 0.832 0.853 2.52
0.5 0.906 0.901 -0.55
1 0.977 0.958 -1.94
2 1.057 1.054 -0.28
5 1.315 1.313 -0.15
10 1.713 1.723 0.58
14 2.051 2.045 -0.29
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5. Reverse Current Characteristic
Circuit Simulation result
800uA
700uA
600uA
500uA
400uA
300uA
200uA
100uA
0A
0V 0.5KV 1.0KV 1.5KV 2.0KV
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
C4D08120A
0
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5

6. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
1200 7.600 7.889 3.80
1300 17.800 17.485 -1.77
1400 40.200 38.767 -3.56
1500 83.280 85.970 3.23
1550 130.640 127.966 -2.05
1555 800.000 800.000 0.00
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7. Junction Capacitance Characteristic
Circuit Simulation result
600p
500p
400p
300p
200p
100p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(1000V/10u)
V(R)
Evaluation circuit
V2
R
0
U1
V1 = 0 V1 C4D08120A
V2 = 1000
TD = 0
TR = 10us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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8. Comparison Graph
Circuit Simulation result
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 536.860 539.666 0.52
0.2 517.123 521.464 0.84
0.5 477.648 477.825 0.04
1 430.277 424.937 -1.24
2 361.749 359.002 -0.76
5 260.535 266.414 2.26
10 200.000 204.214 2.11
20 146.857 153.420 4.47
50 100.000 103.280 3.28
100 73.055 75.950 3.96
200 56.054 55.920 -0.24
500 38.475 37.110 -3.55
1000 28.001 27.260 -2.65
All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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