Modeling of Power MOSFET Device Parameters
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SPICE MODEL of TPCA8011-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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Modeling of Power MOSFET Device Parameters
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: TPCA8011-H MANUFACTURER: TOSHIBA Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic Circuit Simulation Result 150 140 130 120 110 100 90 80 gfs 70 60 50 40 30 20 Measurement 10 Simulation 0 0 10 20 30 40 50 ID(A) Comparison table gfs Id(A) Error(%) Measurement Simulation 1 28.500 28.000 -1.754 2 33.000 33.333 1.010 5 50.000 50.000 0.000 10 68.000 68.667 0.980 20 95.000 95.238 0.251 50 141.000 142.857 1.317 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristic Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(V3) V_V2 Evaluation circuit U23 V3 0Vdc TPCA8011-H V1 V2 0Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 50 Measurement Simulation 40 ID - Drain Current - A 30 20 10 0 0 1 2 3 4 5 6 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.1 1.350 1.384 2.519 0.2 1.400 1.397 -0.214 0.5 1.420 1.420 0.000 1 1.450 1.446 -0.276 2 1.490 1.484 -0.403 5 1.550 1.560 0.645 10 1.650 1.647 -0.182 20 1.770 1.774 0.226 50 2.000 2.036 1.800 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Rds(on) Characteristic Circuit Simulation result 24A 20A 16A 12A 8A 4A 0A 0V 50mV 100mV 150mV 200mV I(V3) V_VDS Evaluation circuit U23 V3 0Vdc VGS TPCA8011-H VDS 4.5Vdc 0Vdc 0 Simulation Result ID=20A, VGS=10V Measurement Simulation Error (%) R DS (on) 2.700 m 2.698 m -0.074 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n V(W1:3) Time*1mS Evaluation circuit U23 V2 0Vdc Dbreak D1 PER = 1000u PW = 600u W1 I2 TF = 10n + TPCA8011-H 40Adc TR = 10n TD = 0 - I2 = 1m W I1 IOFF = 100uA V1 I1 = 0 ION = 0uA 16Vdc 0 Simulation Result VDD=16V,ID=40A Measurement Simulation Error (%) ,VGS=5V Qgs(nC) 7.700 7.684 -0.208 Qgd(nC) 11.000 11.053 0.482 Qg 32.000 29.676 -7.263 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.2 2440 2445 0.205 0.5 2130 2150 0.939 1 1820 1850 1.648 2 1480 1500 1.351 5 1050 1050 0.000 10 750 750 0.000 20 550 540 -1.818 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 0.97us 1.00us 1.05us 1.10us 1.15us V(L1:2)*2 V(L2:1) Time Evaluation circuit U23 L2 RL 50nH 0.5 R1 L1 V1 = 0 30nH V2 = 10 V2 4.7 V1 TD = 1u R2 TPCA8011-H 10Vdc TR = 10n TF = 10n 4.7 PW = 10u PER = 200u 0 Simulation Result ID=20 A, VDD=15V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 24.000 24.152 0.633 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result 100A 10 2.6 2.4 6 3 5 80A 2.3 2.2 60A 2.1 40A 2 1.9 20A VGS=1.7 V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vdsense) V_Vvariable Evaluation circuit U23 Vdsense 10Vdc 0Vdc TPCA8011-H Vv ariable Vstep 5Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. BODY DIODE Forward Current Characteristic Circuit Simulation Result 1.0KA 100A 10A 1.0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m TPCA8011-H V1 0Vdc U23 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation Drain reverse current IDR(A) 100 10 1 0 0.2 0.4 0.6 0.8 1 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 1 0.590 0.587 -0.508 2 0.610 0.611 0.164 5 0.650 0.652 0.308 10 0.695 0.693 -0.288 20 0.745 0.742 -0.403 50 0.830 0.832 0.241 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us I(R1) Time Evaluation Circuit R1 50 TPCA8011-H V1 = -9.4v V1 V2 = 10.6v TD = 7n U23 TR = 10ns TF = 13ns PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Trr Measurement Simulation Error (%) Trj+Trb(ns) 156.500 156.592 0.059 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Reference Trj=16.5(ns) Trb=140ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit U23 R1 TPCA8011-H R2 0.01m 100MEG V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006