Uni junction transistor.pptx
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The document discusses the unijunction transistor (UJT). The UJT is a semiconductor device with two layers and three terminals. It contains a single PN junction, formed between a lightly doped N-type silicon bar and a heavily doped P-type material on one side. The terminals are the emitter (P-type) and the two bases (B1 and B2, connected to either end of the N-type bar). Current flows through two series resistors (RB1 and RB2) in the N-type channel. The junction acts as a diode. During operation, voltage is applied between the emitter and bases to control current flow. The device exhibits distinctive voltage-current characteristics used in switching
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Unijunction transistor
The document discusses the unijunction transistor (UJT), a three-terminal semiconductor device with one PN junction. It consists of a lightly doped silicon bar with a heavily doped P-type material alloyed to one side, forming the single junction. The UJT has three terminals - an emitter, and two bases B1 and B2. When a voltage is applied across B2-B1, the UJT exhibits a negative resistance characteristic, allowing it to be used as an oscillator. Once triggered by a pulse at one of its terminals, the emitter current increases regeneratively until a limiting value is reached. Applications of the UJT include phase control, switching, pulse generation, and timing circuits.
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This document discusses TRIACs and DIACs. TRIACs are bidirectional semiconductor switches that can control AC in a load. They consist of two SCRs connected in inverse parallel with a common gate. DIACs are also bidirectional semiconductor devices that can be switched from off to on with either polarity of applied voltage. They have no control terminal. Both devices exhibit avalanche breakdown and negative resistance characteristics. TRIACs are used for phase control and lamp switching. DIACs are primarily used to trigger TRIACs in applications like light dimmers and heat controls.
Unijunction transistor (ujt)
The unijunction transistor (UJT) is a three-terminal semiconductor device that contains only one PN junction. It consists of a lightly doped N-type semiconductor bar with two terminals (B1 and B2) on either side and an emitter terminal. A PN junction is formed close to B2. The UJT exhibits negative resistance in its operating region between the peak and valley points on its IV characteristics curve, making it useful for oscillators and timing circuits. It can be used more efficiently than BJTs in switching applications.
Bipolar Junction Transistor(BJT)
A bipolar junction transistor (BJT) is a transistor that uses both electrons and holes as charge carriers. It has two semiconductor junctions, an emitter, base, and collector. There are two types - NPN transistors have an N-type material between two P-type materials, while PNP transistors have a P-type material between two N-type materials. BJTs can be used as amplifiers to increase voltage, current, or power of a signal, or as switches to drive high-current devices by using current gain to increase collector current substantially.
Ujt uni junction transistor - basics
Original Uni-junction transistor or UJT is a simple device in which a bar of N-type semiconductor material into which P-type material is diffused; somewhere along its length defining the device parameter as intrinsic standoff. The 2N2646 is the most commonly used version of UJT.
TRANSISTORS
The document discusses the history and operation of transistors, beginning with the point-contact transistor invented in 1947 by Bardeen, Brattain, and Shockley at Bell Labs. It then covers the basic structure and types of bipolar junction transistors, including NPN and PNP, as well as their operating regions and usage as switches and amplifiers. New developments in transistor technology include 3D transistors using tri-gate designs for improved power efficiency and performance.
SCR.pptx
The document discusses silicon controlled rectifiers (SCRs). Key points:
- SCRs are four-layer semiconductor devices that form an NPNP or PNPN structure with three terminals - anode, cathode, and gate.
- SCRs can operate in forward blocking, forward conduction, or reverse blocking modes depending on voltage polarity and gate signal.
- Forward blocking mode allows voltage buildup but no current flow. Forward conduction occurs when voltage exceeds the breakdown voltage or gate is pulsed.
- Characteristics include forward breakover voltage, holding current, and latching current. Holding current maintains conduction; latching current triggers the device.
- SCRs can be triggered
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The document discusses insulated gate bipolar transistors (IGBTs). It describes IGBTs as having MOSFET-like input characteristics and bipolar junction transistor-like output characteristics. The document summarizes IGBT structure, working principles, characteristics including transfer and switching characteristics, and methods of connecting IGBTs in series and parallel. It also discusses protection of IGBTs from overvoltage, overcurrent, high dv/dt, and overheating.
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The document discusses the unijunction transistor (UJT), a three-terminal semiconductor device with one PN junction. It consists of a lightly doped silicon bar with a heavily doped P-type material alloyed to one side, forming the single junction. The UJT has three terminals - an emitter, and two bases B1 and B2. When a voltage is applied across B2-B1, the UJT exhibits a negative resistance characteristic, allowing it to be used as an oscillator. Once triggered by a pulse at one of its terminals, the emitter current increases regeneratively until a limiting value is reached. Applications of the UJT include phase control, switching, pulse generation, and timing circuits.
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This document discusses TRIACs and DIACs. TRIACs are bidirectional semiconductor switches that can control AC in a load. They consist of two SCRs connected in inverse parallel with a common gate. DIACs are also bidirectional semiconductor devices that can be switched from off to on with either polarity of applied voltage. They have no control terminal. Both devices exhibit avalanche breakdown and negative resistance characteristics. TRIACs are used for phase control and lamp switching. DIACs are primarily used to trigger TRIACs in applications like light dimmers and heat controls.
Unijunction transistor (ujt)
The unijunction transistor (UJT) is a three-terminal semiconductor device that contains only one PN junction. It consists of a lightly doped N-type semiconductor bar with two terminals (B1 and B2) on either side and an emitter terminal. A PN junction is formed close to B2. The UJT exhibits negative resistance in its operating region between the peak and valley points on its IV characteristics curve, making it useful for oscillators and timing circuits. It can be used more efficiently than BJTs in switching applications.
Bipolar Junction Transistor(BJT)
A bipolar junction transistor (BJT) is a transistor that uses both electrons and holes as charge carriers. It has two semiconductor junctions, an emitter, base, and collector. There are two types - NPN transistors have an N-type material between two P-type materials, while PNP transistors have a P-type material between two N-type materials. BJTs can be used as amplifiers to increase voltage, current, or power of a signal, or as switches to drive high-current devices by using current gain to increase collector current substantially.
Ujt uni junction transistor - basics
Original Uni-junction transistor or UJT is a simple device in which a bar of N-type semiconductor material into which P-type material is diffused; somewhere along its length defining the device parameter as intrinsic standoff. The 2N2646 is the most commonly used version of UJT.
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The document discusses silicon controlled rectifiers (SCRs). Key points:
- SCRs are four-layer semiconductor devices that form an NPNP or PNPN structure with three terminals - anode, cathode, and gate.
- SCRs can operate in forward blocking, forward conduction, or reverse blocking modes depending on voltage polarity and gate signal.
- Forward blocking mode allows voltage buildup but no current flow. Forward conduction occurs when voltage exceeds the breakdown voltage or gate is pulsed.
- Characteristics include forward breakover voltage, holding current, and latching current. Holding current maintains conduction; latching current triggers the device.
- SCRs can be triggered
IGBT
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Pn junction diode by sarmad baloch
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I AM SARMAD KHOSA
BSIT (5TH A)
(ISP)
FACEBOOK PAGLE::
https://www.facebook.com/LAUGHINGHLAUGHTER/
YOUTUBE CHANNEL:::
https://www.youtube.com/channel/UCUjaIeS-DHI9xv-ZnBpx2hQ
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A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction that acts exclusively as an electrically controlled switch.
The UJT is not used as a linear amplifier. It is used in free-running oscillators, synchronized or triggered oscillators, and pulse generation circuits at low to moderate frequencies (hundreds of kilohertz). It is widely used in the triggering circuits for silicon controlled rectifiers. The low cost per unit, combined with its unique characteristic, have warranted its use in a wide variety of applications like oscillators, pulse generators, saw-tooth generators, triggering circuits, phase control, timing circuits, and voltage- or current-regulated supplies.[1] The original unijunction transistor types are now considered obsolete, but a later multi-layer device, the programmable unijunction transistor (PUT), is still widely available.
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I AM SARMAD KHOSA
BSIT (5TH A)
(ISP)
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https://www.facebook.com/LAUGHINGHLAUGHTER/
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Transistor
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Bipolar junction transistors (BJTs) are three-terminal semiconductor devices consisting of two pn junctions. There are two types, NPN and PNP, depending on the order of doping. BJTs can operate as amplifiers and switches by controlling the flow of majority charge carriers through the base terminal. Proper biasing is required to operate the transistor in its active region between cutoff and saturation. Common configurations include common-base, common-emitter, and common-collector, each with different input and output characteristics. Maximum ratings like power dissipation and voltages must be considered for circuit design and temperature derating.
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Transistor
Here you find the information about Transistors. And know about
-> Type Of Transistor:
->Region of Transistor:
->P-N Junction Diodes
->Transistor application
->Transistor Connections
Limitation:
->Future of transistor:
Type of pn junction & rectifiers plus Transistor
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- 1. SUBJECT : ELECTRONICS TOPIC : UJT PRESENTED BY :-
- 2. CONTENT WHAT IS UJT CONSTRUCTION WORKING V- I CHARACTERISTICS
- 3. What is UJT ? Unijunction Transistor is a semiconductor switching device having 2 layers and 3 terminals It is called so because of the presence of only one junction. It has the ability to limit large power with a small input signal and is also known as a double base diode.
- 4. Construction of UJT :- In Unijunction Transistor, the PN Junction is formed by lightly doped N type silicon bar with heavily doped P type material on one side. The ohmic contact on either ends of the silicon bar is termed as Base 1 (B1) and Base 2 (B2) and P-type terminal is named as emitter.
- 5. Working of UJT :- The N-type channel consists of two resistors RB1 and RB2 in series And a equivalent diode D representing the PN junction The emitter PN junction is fixed along the ohmic channel during its manufacturing process
- 6. Working of UJT :- The variable resistance RB1, is connected between the terminals Emitter (E) and Base1 (B1) , the RB2 between the Emitter(E) and Base2 (B2) Since the PN junction is more close to B2 , the value of RB2 will be less than the variable resistance RB1
- 7. Working of UJT :- The voltage across resistance RB1 of the voltage divider circuit is calculated by 𝑉𝑅𝐵1 = 𝑅𝐵1 𝑅𝐵1 + 𝑅𝐵2 + 𝑉𝐵𝐵
- 8. V – I Characteristics of UJT :-
- 9. Reference :- https://electricalfundablog.com/unijunction-transistor-ujt- construction-working-characteristics-curve-applications https://electricalfundablog.com/unijunction-transistor-ujt- construction-working-characteristics-curve-applications/