The document discusses the construction and operating principles of an Insulated Gate Bipolar Transistor (IGBT). It describes how the IGBT was developed from earlier power semiconductor devices like the IGT and COMFET. The IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latchup. In operation, the IGBT behaves like a MOSFET for gate control and can block high voltages while supporting medium frequencies and current levels, making it suitable for replacing bipolar junction transistors in applications like motor drives and power supplies.
This ppt provides a brief overview on thyristors commonly known as SCRs. V- I characteristics curve, triggering methods, protection methods, series and parallel operations of SCRs, applications are discussed in this slide.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. http://bit.ly/2PIOIQM
This ppt provides a brief overview on thyristors commonly known as SCRs. V- I characteristics curve, triggering methods, protection methods, series and parallel operations of SCRs, applications are discussed in this slide.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. http://bit.ly/2PIOIQM
Silicon Controlled Rectifier (SCR) is a unidirectional semiconductor device made of silicon.SCR is a three-terminal, four-layer semiconductor device consisting of alternate layers of p-type and n-type material.
These slides provide an elementary description of Power Electronics and its application domains. It also shows the different power devices and converters.
The complete list of thyristor family members include diac (bidirectional diode thyristor), triac (bidirectional triode thyristor), SCR (silicon controlled rectifier), Shockley diode, SCS (silicon controlled switch), SBS (silicon bilateral switch), SUS (silicon unilateral switch) also known as complementary SCR or CSCR, LASCR (light activated SCR), LAS (light activated switch) and LASCS (light activated SCS).
Silicon Controlled Rectifier (SCR) is a unidirectional semiconductor device made of silicon.SCR is a three-terminal, four-layer semiconductor device consisting of alternate layers of p-type and n-type material.
These slides provide an elementary description of Power Electronics and its application domains. It also shows the different power devices and converters.
The complete list of thyristor family members include diac (bidirectional diode thyristor), triac (bidirectional triode thyristor), SCR (silicon controlled rectifier), Shockley diode, SCS (silicon controlled switch), SBS (silicon bilateral switch), SUS (silicon unilateral switch) also known as complementary SCR or CSCR, LASCR (light activated SCR), LAS (light activated switch) and LASCS (light activated SCS).
edcThe valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy
The conduction band is the band of electron orbitals that electrons can jump up into from the valence band when excited. When the electrons are in these orbitals, they have enough energy to move freely in the material
The energy difference between the highest occupied energy state of the valence band and the lowest unoccupied state of the conduction band is called the band gap
introduction, types & structure of MOSET ,turn ON and OFF of device, working, I-V characteristics of MOSFET,Different regions of operations,applications, adv & disadvantages
FIELD EFFECT TRANSISTERS (FET)
Types of Field Effect Transistors
i) Junction field effect transistor (JFET)
(ii) Metal oxide semiconductor field effect transistor (MOSFET)
NO1 Uk best vashikaran specialist in delhi vashikaran baba near me online vas...Amil Baba Dawood bangali
Contact with Dawood Bhai Just call on +92322-6382012 and we'll help you. We'll solve all your problems within 12 to 24 hours and with 101% guarantee and with astrology systematic. If you want to take any personal or professional advice then also you can call us on +92322-6382012 , ONLINE LOVE PROBLEM & Other all types of Daily Life Problem's.Then CALL or WHATSAPP us on +92322-6382012 and Get all these problems solutions here by Amil Baba DAWOOD BANGALI
#vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore#blackmagicformarriage #aamilbaba #kalajadu #kalailam #taweez #wazifaexpert #jadumantar #vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore #blackmagicforlove #blackmagicformarriage #aamilbaba #kalajadu #kalailam #taweez #wazifaexpert #jadumantar #vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore #Amilbabainuk #amilbabainspain #amilbabaindubai #Amilbabainnorway #amilbabainkrachi #amilbabainlahore #amilbabaingujranwalan #amilbabainislamabad
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdf
igbt and its characteristics
1. Vanta
Vachhoda
Branch : Electrical 5th sem
Subject : Power Electronics-1
Name Enrollment No.
1. Khant Mukesh B. 131030109018
2. Parmar Ajay 131030109027
3. Parmar Dharmendra G. 131030109029
2.
3. Introduction
• This was achieved by the GE Research Laboratory by
the introduction of the device IGT and by the RCA
research laboratory with the device COMFET.
• The IGT device has undergone many improvement
cycles to result in the modern Insulated Gate Bipolar
Transistor (IGBT).
• These devices have near ideal characteristics for high
voltage (> 100V) medium frequency (< 20 kHZ)
applications.
• This device along with the MOSFET (at low voltage
high frequency applications) have the potential to
replace the BJT completely.
5. Construction of IGBT
• Vertical cross section of a n channel IGBT cell is
shown in Fig 1. Although p channel IGBTs are
possible n channel devices are more common.
• including the insulated gate structure and the
shorted body (p type) – emitter (n+ type)
structure.
• The doping level and physical geometry of the p
type body region however, is considerably different
from that of a MOSFET in order to defeat the latch
up action of a parasitic thyristor embedded in the
IGBT structure
6. • A large number of basic cells as shown in Fig.1 are
grown on a single silicon wafer and connected in
parallel to form a complete IGBT device.
• The IGBT cell has a parasitic p-n-p-n thyristor
structure embedded into it as shown in Fig.2(a).
• The constituent p-n-p transistor, n-p-n transistor
and the driver MOSFET are shown by dotted lines
in this figure.
• Important resistances in the current flow path are
also indicated.
7.
8. • Fig.2(b) shows the exact static equivalent circuit
of the IGBT cell structure.
• The top p-n-p transistor is formed by the p+
injecting layer as the emitter, the n type drain
layer as the base and the p type body layer as the
collector.
• The lower n-p-n transistor has the n+ type
source, the p type body and the n type drain as
the emitter, base and collector respectively.
9. • The base of the lower n-p-n transistor is shorted
to the emitter by the emitter metallization.
• However, due to imperfect shorting, the exact
equivalent circuit of the IGBT includes the body
spreading resistance between the base and the
emitter of the lower n-p-n transistor.
• If the output current is large enough, the voltage
drop across this resistance may forward bias the
lower n-p-n transistor and initiate the latch up
process of the p-n-p-n thyristor structure.
10. • Once this structure latches up the gate control of
IGBT is lost and the device is destroyed due to
excessive power loss.
• A major effort in the development of IGBT has
been towards prevention of latch up of the
parasitic thyristor.
• This has been achieved by modifying the doping
level and physical geometry of the body region.
12. Operating principle of IGBT
• Operating principle of an IGBT can be explained
in terms of the schematic cell structure and
equivalent circuit of Fig.2(a) and (c).
• From the input side the IGBT behaves essentially
as a MOSFET.
• Therefore, when the gate emitter voltage is less
then the threshold voltage no inversion layer is
formed in the p type body region and the device is
in the off state.
• The forward voltage applied between the collector
and the emitter drops almost entirely across the
junction J2.
13. • Very small leakage current flows through the
device under this condition.
• In terms of the equivalent current of Fig.2(c),
when the gate emitter voltage is lower than the
threshold voltage the driving MOSFET of the
Darlington configuration remains off and hence
the output p-n-p transistor also remains off.
• When the gate emitter voltage exceeds the
threshold, an inversion layer forms in the p type
body region under the gate.
14. • This inversion layer (channel) shorts the emitter and
the drain drift layer and an electron current flows
from the emitter through this channel to the drain
drift region.
• This in turn causes substantial hole injection from the
p+ type collector to the drain drift region.
• A portion of these holes recombine with the electrons
arriving at the drain drift region through the channel.
• The rest of the holes cross the drift region to reach
the p type body where they are collected by the source
metallization.
16. • The i-v characteristics of an n channel IGBT is
shown in Fig.4 (a).
• They appear qualitatively similar to those of a
logic level BJT except that the controlling
parameter is not a base current but the gate-
emitter voltage.
• When the gate emitter voltage is below the
threshold voltage only a very small leakage
current flows though the device while the
collector – emitter voltage almost equals the
supply voltage (point C in Fig 7.4(a)).
• The device, under this condition is said to be
operating in the cut off region.
17. • The maximum forward voltage the device can
withstand in this mode (marked VCES in Fig.4
(a)) is determined by the avalanche break down
voltage of the body – drain p-n junction.
• Unlike a BJT, however, this break down voltage
is independent of the collector current as shown
in Fig.4(a).
• IGBTs of Non-punch through design can block a
maximum reverse voltage (VRM) equal to VCES in
the cut off mode.
• However, for Punch Through IGBTs VRM is
negligible (only a few tens of volts) due the
presence of the heavily doped n+ drain buffer
layer.
18. • As the gate emitter voltage increases beyond the
threshold voltage the IGBT enters into the active
region of operation.
• In this mode, the collector current ic is determined
by the transfer characteristics of the device as
shown in Fig.4(b).
19. • As the gate emitter voltage is increased further ic
also increases and for a given load resistance
(RL) vCE decreases.
• At one point vCE becomes less than vgE – vgE(th).
Under this condition the driving MOSFET part
of the IGBT (Fig.2(c)) enters into the ohmic
region and drives the output p-n-p transistor to
saturation.
• Under this condition the device is said to be in
the saturation mode.
• In the saturation mode the voltage drop across
the IGBT remains almost constant reducing only
slightly with increasing vgE .
20. • If a short circuit fault occurs in the load
resistance RL (shown in the inset of Fig 7.4(a))
the fault load line is given by CF.