This document summarizes different types of transistors, including Bipolar Junction Transistors (BJT), Unijunction Transistors (UJT), Field Effect Transistors (FET), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET), FinFETs, and Dualgate transistors. It describes the basic structure and functioning of BJTs, including PNP and NPN types, and provides information on UJTs, FETs including n-channel and p-channel types, MOSFETs, FinFETs which use a 3D "fin" design, and Dualgate transistors which incorporate more than one gate.

1. Presentation-Transistors
By-
Suneel kumar

2. Transistors
• BJT
• UJT
• FET
• MOSFET
• FINFET
• DUALGATE
• UNIFET

3. Transistor
A transistor is a semiconductor device used to
amplify or switch electronic signals and electrical
power. It is composed of semiconductor material
usually with at least three terminals for connection
to an external circuit

4. bipolar junction transistor
A bipolar junction transistor is a type of transistor that
uses both electron and hole charge carriers. In
contrast, unipolar transistors, such as field-effect
transistors, only use one kind of charge carrier. For
their operation, BJTs use two junctions between
two semiconductor types, n-type and p-type.

5. bipolar junction transistor
BJTs come in two types, or polarities, known as
PNP and NPN based on the doping types of the
three main terminal regions. An NPN transistor
comprises two semiconductor junctions that share
a thin p-doped region, and a PNP transistor
comprises two semiconductor junctions that share
a thin n-doped region

6. Uni-junction Transistor
A unijunction transistor (UJT) is a three-
lead electronic semiconductor device with only
one junction that acts exclusively as an electrically
controlled switch.
The UJT is not used as a linear amplifier. It is used in
free-running oscillators, synchronized or triggered
oscillators, and pulse generation circuits at low to
moderate frequencies It is widely used in the
triggering circuits for silicon controlled rectifiers

7. Original Uni-junction transistor- is a simple device in
which a bar of N-type semiconductor material into which P-
type material is diffused; somewhere along its length
defining the device parameter as intrinsic standoff.
Complimentary Uni-junction transistor-CUJT is a bar of
P-type semiconductor material into which N-type material is
diffused somewhere along its length defining the device
parameter as intrinsic standoff
Programmable Uni-junction transistor- is a close
relative of thyristor; just like thyristor, it consists of four P-N
layers and has anode and cathode placed at first and last
layers. The N-type layer near the anode is known as anode
gate.

8. field-effect transistor
The field-effect transistor (FET) is a transistor that uses
an electric field to control the electrical behaviour of the
device. FETs are also known as unipolar
transistors since they involve single-carrier-type
operation.
Field effect transistors generally display very high input
impedance at low frequencies

9. n-channel-
In an n-channel "depletion-mode" device, a negative
gate-to-source voltage causes a depletion region to
expand in width and encroach on the channel from the
sides, narrowing the channel.
p-channe-
In a p-channel "depletion-mode" device, a positive
voltage from gate to body widens the depletion layer by
forcing electrons to the gate-insulator/semiconductor
interface.leaving exposed a carrier-free region of
immobile, positively charged acceptor ions.

10. metal-oxide-semiconductor field-
effect transistor
is a type of field-effect transistor (FET), most
commonly fabricated by the controlled
oxidation of silicon. It has an insulated gate, whose
voltage determines the conductivity of the device.
This ability to change conductivity with the amount of
applied voltage can be used for amplifying or
switching electronic signals.

11. FINFET
FinFET, also known as Fin Field Effect Transistor, is a
type of non-planar or "3D" transistor used in the design
of modern processors. As in earlier, planar designs, it is
built on an SOI (silicon on insulator) substrate.

12. DUALGATE
A multigate device or multiple-gate field-effect
transistor (MuGFET) refers to a MOSFET (metal–
oxide–semiconductor field-effect transistor) that
incorporates more than one gate into a single device.

13. THANK YOU