SPICE MODEL of SSM6K203FE (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional )
PART NUMBER: SSM6K203FE
MANUFACTURER: TOSHIBA
REMARK: N Channel Model
Body Diode (Professional ) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

Circuit Configuration

6 5 4

1 2 3


Equivalent Circuit

D

S1
- -
+ +
R2
S
R1 10MEG DGD

10M CGD
S2
+ +
- -

Q1
S
G

S


MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

16

Measurement
14 Simulation

12
TRANSCONDUCTANCE Gfs(s)

10

8

6

4

2

0
0 1 2 3 4 5
DRIAN CURRENT ID (A)
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.1 1.9608 1.9506 -0.5171
0.2 2.8169 2.7556 -2.1746
0.5 4.3478 4.2557 -2.1199
1 6.0241 6.1206 1.6014
2 8.2988 8.4066 1.2993
5 12.4688 12.3995 -0.5560


Vgs-Id Characteristic

Circuit Simulation result

10A

1.0A

100mA

10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V
I(V2)
V_VGS

Evaluation circuit

V2

U1
SSM6K203FE

VDS
VGS 4.0Vdc
0Vdc

0


Comparison Graph


10
Measurement
Simulation
Drain Current ID (A)

1

0.1

0.01
0 1 2

Gate - Source Voltage VGS (V)
Simulation Result

VGS(V)
ID(A) Error (%)
0.01 0.780 0.778 -0.231
0.1 0.870 0.848 -2.540
0.2 0.915 0.891 -2.656
0.5 1.000 0.977 -2.350
1 1.080 1.075 -0.463
2 1.200 1.217 1.442
5 1.520 1.511 -0.625


Rds(on) Characteristic


2.0A

1.8A

1.6A

1.4A

1.2A

1.0A

0.8A

0.6A

0.4A

0.2A

0A
0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV 90mV
I(V2)
V_VDS

Evaluation circuit

V2

U1
SSM6K203FE

VDS
VGS 4.0Vdc
4.0Vdc

0

Simulation Result

ID=2.0A, VGS=4.0V Measurement Simulation Error (%)
R DS (on) () 0.049 0.049 0.000


Gate Charge Characteristic

10V

9V

8V

7V

6V

5V

4V

3V

2V

1V

0V
0 2.5n 5.0n 7.5n 10.0n 12.5n 15.0n
V(W1:3)
Time*1mA

Evaluation circuit

Vsense

I1
D1
W1 Dbreak 2.8Adc
+
TD = 0
- U1 SSM6K203FE
I2 ION = 0A W
IOFF = 1mA VD
10Vdc

0

Simulation Result

VDD=10V,ID=2.8A,
Measurement Simulation Error (%)
VGS=4.0V
Qgs(nc) 1.100 1.092 -0.727
Qgd(nc) 1.850 1.862 0.649
Qg(nc) 6.000 5.356 -10.733


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 65.000 64.850 -0.231
0.2 60.000 58.900 -1.833
0.5 50.000 49.999 -0.002
1 40.000 39.999 -0.003
2 28.000 27.954 -0.164
5 16.000 15.809 -1.194
10 10.000 9.886 -1.138
20 6.500 6.712 3.265


Switching Time Characteristic


12V

10V

8V

6V

4V

2V

0V

-2V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(3)/1 V(L3:1)*4
Time

Evaluation circuit

RL
3
U2
20nH 5

R1 L3

V1 = 0
30nH
V2 = 5 4.7
TD = 1u V1 R2 SSM6K203FE
TR = 10n 4.7 VDD
TF = 10n 10Vdc
PW = 10u
PER = 10m

0

Simulation Result

ID=2.0A, VDD=10V
Measurement Simulation Error(%)
VGS=0/2.5V
Ton(ns) 14.000 14.10 0.714


Output Characteristic


6.0A

4.0V 2.5V
1.8V
5.0A
1.5V

4.0A

3.0A

2.0A
VGS=1.2V

1.0A

0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(V2)
V_VDS

Evaluation circuit

V2

U1
SSM6K203FE

VDS
VGS 4.0Vdc
0Vdc

0


BODY DIODE
Forward Current Characteristic


10A

1.0A

100mA

10mA

1.0mA

100uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

U1
V1 SSM6K203FE
0Vdc

0


Comparison Graph


10

Measurement
Simulation
Reverse Drain Current- IDR (A)

1

0.1

0.01

0.001

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

Drain - Source Voltage VDS (V)

Simulation Result

VDS(V) VDS(V)
IDR(A) %Error
0.0001 0.460 0.462 0.348
0.001 0.540 0.536 -0.759
0.01 0.610 0.611 0.131
0.1 0.685 0.688 0.496
0.2 0.710 0.711 0.183
0.5 0.750 0.747 -0.440
1 0.780 0.779 -0.192
2 0.815 0.817 0.221
5 0.880 0.879 -0.125


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
5.23us 5.25us 5.27us 5.29us 5.31us 5.33us
I(R1)
Time

Evaluation Circuit

R1

50

U2
V1 = -9.4v V1 D6K203
V2 = 10.7v
TD = 245n
TR = 10ns
TF = 10ns
PW = 5us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
ttj (ns) 7.600 7.663 0.829
trb (ns) 9.400 9.381 -0.202
trr (ns) 17.000 17.044 0.259


Reverse Recovery Characteristic Reference

Trj=7.6(ns)
Trb=9.4(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE
Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 10V 20V 30V 40V 50V 60V
I(R1)
V_V1

Evaluation Circuit

R1
openopen
0.01m open

V1 U1
0Vdc SSM6K203FE Ropen
100MEG

openopen 0

0


Zener Voltage Characteristic Reference


SPICE MODEL of SSM6K203FE (Professional+BDP Model) in SPICE PARK

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