SPICE MODEL of 2SK3058 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK3058 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK3058 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: 2SK3058 MANUFACTURER: NEC Corporation REMARK: Body Diode (Model Parameters) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. Circuit Configuration Drain Gate U? Source MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. Transconductance Characteristic s Circuit Simulation Result 100 Measurement Simulation TRANSCONDUCTANCE Gfs(s) 10 1 0 4 8 12 16 20 DRIAN CURRENT ID (A) Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 1 13.6986 13.7800 0.5940 2 17.1253 17.0000 -0.7317 5 25.0000 25.1235 0.4942 10 36.0101 36.2158 0.5712 20 60.0000 59.8892 -0.1847 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Vgs-Id Characteristics Circuit Simulation Result 100A 10A 1.0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V I(V2) V_VGS Evaluation circuit V2 U1 2SK3058 VDD 10Vdc VGS 0Vdc 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation ID - Drain Current -A 10 1 1 2 3 4 VGS - Gate to Source Voltage - V Comparison table VGS(V) ID(A) Measurement Simulation Error (%) 1 2.1700 2.1786 0.3963 2 2.2800 2.2633 -0.7325 5 2.4500 2.4426 -0.3020 10 2.6500 2.6609 0.4113 20 2.9600 2.9900 1.0135 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. *Rds(on) Characteristic Circuit Simulation result 28.0A 25.2A 22.4A 19.6A 16.8A 14.0A 11.2A 8.4A 5.6A 2.8A 0A 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V I(V2) V_VDD Evaluation circuit V2 U1 2SK3058 VDD 10Vdc VGS 10Vdc 0 0 0 Simulation Result ID=28A, VGS=10V Measurement Simulation Error (%) R DS (on) 12.000 m 12.017 m 0.1416 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 10n 20n 30n 40n 50n 60n 70n 80n V(W1:3) Time*1mA Evaluation circuit Vsense U1 2SK3058 I1 D1 Dbreak 55Adc W1 + - I2 W VD ION = 0A 48Vdc IOFF = 1.1mA 0 Simulation Result VDD=48V,ID=55A Measurement Simulation Error (%) ,VGS=10V Qgs 7.00 nC 7.30 nC 4.2857 Qgd 18.00 nC 17.79 nC -1.1610 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 780.000 779.625 -0.048 2 610.000 615.899 0.967 5 420.000 430.794 2.570 10 330.000 321.183 -2.672 20 245.000 237.566 -3.034 50 150.000 158.466 5.644 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Switching Time Characteristic Circuit Simulation result 12V 11V 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0.8us 1.0us 1.2us 1.4us V(L3:2) V(3)/3 Time Evaluation circuit Vsense RL 3 10 V1 = 0 U1 2SK3058 R1 L3 V2 = 20 2 5nH TD = 1u 10 VD 30Vdc TR = 10n V1 R2 TF = 10n 10 PW = 5u PER = 10u 0 Simulation Result ID=28A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td (on) 36.000 ns 35.941 ns -1.413 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Output Characteristic Circuit Simulation result 100A 90A VGS=10V 80A 70A 60A 50A VGS= 4.0V 40A 30A 20A 10A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(V2) V_VDS Evaluation circuit V2 U1 2SK3058 VDS 10Vdc VGS 10Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation Circuit V2 VGS 0Vdc VDS 0Vdc U1 2SK3058 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation 100 Diode Forward Current - A 10 1 0.1 0.01 0 0.5 1 1.5 2 Source to Drain Voltage - V Simulation Result VDS(V) IDR(A) Measurement Simulation %Error 0.1 0.5950 0.5967 0.2857 0.2 0.6220 0.6211 -0.1447 0.5 0.6550 0.6546 -0.0611 1 0.6810 0.6804 -0.0881 2 0.7100 0.7084 -0.2254 5 0.7540 0.7515 -0.3316 10 0.7920 0.7936 0.2020 20 0.8600 0.8570 -0.3488 50 1.0100 1.0000 -0.9901 100 1.2000 1.2144 1.2000 200 1.6200 1.6144 -0.3457 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.96us 20.04us 20.12us 20.20us 20.28us 20.36us I(R1) Time Evaluation Circuit R1 V1 = -9.5V 50 VGS V2 = 10.5V 0Vdc TD = 50n V1 TR = 10ns TF = 5.7n PW = 20us U1 2SK3058 PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 32.000 ns 31.988 ns -0.0375 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Reference Trj=32(ns) Trb=51(ns) Conditions:Ifwd=0.2,lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(V2) V_VGS Evaluation Circuit U1 2SK3058 V2 ID 0Adc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006