SPICE MODEL of 2SK2233 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK2233
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1

Circuit Configuration

U1
2SK2233

Equivalent Circuit

D

S1
- -
+ +
R2
S
R1 10MEG DGD

10M CGD
S2
+ +
- -

Q1
S
G

S

2

MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3

Transconductance Characteristics

Circuit Simulation result

VDS=10V

Comparison table

gfs (S)
ID (A) %Error
Measurement Simulation
2 7.890 7.911 0.26
5 12.270 12.291 0.17
10 17.050 17.063 0.08
20 23.510 23.482 -0.12
50 35.195 35.217 0.06

4

Vgs-Id Characteristics


50A

40A

30A

20A

10A

0A
0V 2V 4V 6V 8V 10V
I(U1:2)
V_VGS

Evaluation circuit

U1
2SK2233
V1

10V
VGS

0

5

Comparison Graph


VDS=10V

Comparison table

VGS (V)
ID (A) %Error
1 2.385 2.358 -1.13
2 2.571 2.501 -2.71
5 2.850 2.790 -2.12
10 3.120 3.122 0.08
20 3.545 3.607 1.75
50 4.590 4.619 0.63

6

Rds (on) Characteristics


30A

25A

20A

15A

10A

5A

0A
0V 50mV 150mV 250mV 350mV 450mV 550mV
I(U1:2)
V_V1

Evaluation circuit

U1
2SK2233
V1

VGS
10V

0

Test condition: VGS=10(V), ID=25(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 22.000 22.113 0.51

7

Output Characteristics


100A
10
8 6
80A

5

60A

40A 4

20A
VGS = 3V

0A
0V 4V 8V 12V 16V 20V
I(U1:2)
V_V1

Evaluation circuit

U1
2SK2233
V1
VGS

0

8

Capacitance Characteristics

Simulation result

Measurement
Simulation

Comparison table

Cbd (pF)
VDS (V) %Error
0.1 1750.000 1722.000 -1.60
0.2 1620.000 1647.000 1.67
0.5 1450.000 1472.000 1.52
1 1300.000 1277.800 -1.71
2 1045.000 1048.000 0.29
5 755.000 747.120 -1.04
10 555.000 557.200 0.40
20 405.000 408.000 0.74
50 265.000 265.740 0.28
60 240.000 244.000 1.67

9

Gate Charge Characteristics


16V

12V

8V

4V

0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mA

Evaluation circuit

U1 D1
2SK2233 dmod ID
45A
I1 = 0 W1
I2 = 1m +
TF = 10n
TR = 10n - VDD
TD = 0 IG W 48V
PER = 1 IOFF = 1mA
PW = 10m ION = 0

0

Test condition: VDD=48(V), VGS=10(V), ID=45(A)
Qgs nC 11.700 11.661 -0.33
Qgd nC 20.000 20.078 0.39
Qg nC 60.000 59.592 -0.68

10

Switching Time Characteristics


15V

10V

5V

0V
1.8us 1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:2)/3 V(U1:1)
Time

Evaluation circuit1

L2
U1 2 1
2SK2233
50nH
L1
R1
30nH RL
V1 = 0 1 2 1.2
V2 = 20
TD = 2u V1
TR = 4n 4.7 R2 VDD
TF = 4n 4.7 30
PW = 5u
PER = 500u

0

Test condition: VDD=30(V), VGS=0/10(V), ID=25(A), RG=4.7, RL=1.2
ton ns 30.000 30.010 0.03

11

Equivalent Circuit

F1
A
G1 R2 S1 S
F
R1 E1 300 - - VON = 100mV
IN+ OUT+ 1 VOFF = 90mV
IN- OUT- + +
+ +
- C1 ROFF = 50MEG
GVALUE
- RON = 1m
E 100p

D1 D2

K
{V(N00091,N00063)-V(N00022,N00019)}
0

Circuit Configuration

U1
D2SK2233_P

12

Body Diode Forward Current Characteristics


100A

10A

1.0A
0V -0.4V -0.8V -1.2V -1.6V -2.0V
I(VDS)
V_VDS

Evaluation circuit

U1
2S K22 33
VDS

0

13

Comparison Graph

Simulation result

Comparison table

-VDS (V)
IDR (A) %Error
1 0.677 0.678 0.15
2 0.720 0.713 -0.99
5 0.780 0.777 -0.44
10 0.850 0.855 0.59
20 0.969 0.987 1.86
50 1.354 1.332 -1.62
100 1.853 1.860 0.38

14

Reverse Recovery Characteristics


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
Time

Evaluation circuit

R1

50
V1 = -9.4V
V2 = 10.7V U1
TD = 0ns V1 D2SK2233_P
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us

0

Comparison Measurement vs. Simulation
trj ns 28.800 28.841 0.14
trb ns 96.000 96.140 0.15
trr ns 124.800 124.981 0.15

15

Reverse Recovery Characteristics Reference

Measurement

trj = 28.8(ns)
trb = 96(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50

Example

Relation between trj and trb

16

ESD PROTECTION DIODE
Zener Voltage Characteristics


10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
V_VGS

Evaluation circuit

U1
2S K22 33
R1
1G
VG S

0

17

Zener Voltage Characteristics Reference

Measurement

IZ = 1(mA)
VZ =23.15(V) at IZ=1.11mA

18

SPICE MODEL of 2SK2233 (Professional+BDP Model) in SPICE PARK

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