SPICE MODEL of 2SK3905 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameters)
PART NUMBER: 2SK3905
MANUFACTURER: TOSHIBA
REMARK: N Channel Model
Body Diode (Model parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
2
1
3
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
20
Measurement
Simulation
TRANSCONDUCTANCE Gfs(s)
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
DRIAN CURRENT ID (A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
2.000 2.179 2.209 1.377
5.000 12.755 12.665 -0.706
10.000 18.727 18.557 -0.908
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V 12V 14V
I(V2)
V_VGS
Evaluation circuit
V2
U7
2SK3905
VDS
10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
30
Measurement
Simulation
25
Drain Current ID (A)
20
15
10
5
0
0 2 4 6 8 10
Gate - Source Voltage VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 4.900 4.923 0.476
2 5.120 5.170 0.982
5 5.700 5.672 -0.500
10 6.300 6.254 -0.724
20 7.150 7.111 -0.541
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
8.5A
6.8A
5.1A
3.4A
1.7A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_VDS
Evaluation circuit
V2
U7
2SK3905
VDS
8.5Vdc
VGS
10Vdc
0
Simulation Result
ID=8.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.25 0.25 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
U3 2SK3905
I1
D1
W1 Dbreak 17Adc
+
TD = 0
-
I2 ION = 0A W
IOFF = 1mA VD
400Vdc
0
Simulation Result
VDD=400V,ID=17A,
Measurement Simulation Error (%)
VGS=10V
Qgs(nc) 15.00 15.028 0.187
Qgd(nc) 23.00 23.056 -0.176
Qg(nc) 58.00 34.690 -42.183
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 3450 3440 -0.290
0.2 3200 3210 0.313
0.5 2600 2650 1.923
1 2000 1980 -1.000
2 1450 1450 0.000
5 900 915 1.667
10 600 590 -1.667
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
0.600us 1.000us 1.500us 1.694us
V(3)/20 V(L3:1)*1
Time
Evaluation circuit
Vsense RL
3
24
U1 2SK3905
R2 L3 2
30nH
V1 = 0 50 VD
V2 = 20 V1 200Vdc
TD = 1u R1
TR = 10n
TF = 10n 50
PW = 10u
PER = 10m
0
Simulation Result
ID=8.5A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 130.000 129.726 -0.211
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
20A
10V 8.0V 7.0V
18A 6.75V
16A
6.5V
14A
12A 6.25V
10A
6.0V
8A
6A
5.5V
4A
VGS=5.0
2A
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(V2)
V_VDS
Evaluation circuit
V2
U7
2SK3905
VDS
10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1 2SK3905
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Reverse Drain Current- IDR (A)
10
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source Voltage VDS (V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.1 0.600 0.599 -0.167
0.2 0.625 0.625 0.048
0.5 0.662 0.662 0.000
1 0.695 0.693 -0.288
2 0.730 0.731 0.137
5 0.800 0.800 0.000
10 0.880 0.879 -0.114
20 1.000 0.999 -0.100
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
4.0us 6.0us 8.0us 12.0us 16.0us 20.0us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4V V1 U2 2SK3905
V2 = 10.7V
TD = 2u
TR = 100ns
TF = 100ns
PW = 5us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr (us) 2.960 2.940 -0.676
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=1.96(us)
Trb=1.00(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 20V 40V 60V 80V 100V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
U1 2SK3905
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007