SPICE MODEL of 2SJ304 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: 2SJ304
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

Circuit Configuration

D

G

S

Equivalent Circuit

D

S
- -
+ +
R3
S2 10MEG DGD

R1 CGD
10M S1
+ +
- -

S M1
G

S


MOFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

11
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)

9

7

5

3
0 2 4 6 8 10
- DRIAN CURRENT ID (A)

Comparison table

gfs
- Id(A) Error(%)
Measurement Simulation
1 3.342 3.356 0.410
2 4.845 4.796 -1.017
5 7.454 7.375 -1.067
10 10.209 10.121 -0.854


Vgs-Id Characteristic

Circuit Simulation result

-30.0A

-27.5A

-25.0A

-22.5A

-20.0A

-17.5A

-15.0A

-12.5A

-10.0A

-7.5A

-5.0A

-2.5A

0A
0V -1V -2V -3V -4V -5V -6V -7V -8V -9V -11V -13V
I(V3)
V_VGS

Evaluation circuit

V3
0Vdc

U1 VDS
2SJ304_P -10Vdc

VGS
0Vdc

0


Comparison Graph


24
Measurement
Simulation
20
- Drain Current ID (A)

16

12

8

4

0
2 2.5 3 3.5 4 4.5 5

- Gate - Source Voltage VGS (V)

Simulation Result

- VGS(V)
- ID(A) Error (%)
1 2.265 2.277 0.53
2 2.500 2.526 1.04
5 3.000 3.029 0.96
10 3.600 3.612 0.32
20 4.500 4.465 -0.77


Rds(on) Characteristic


-7.0A

-6.0A

-5.0A

-4.0A

-3.0A

-2.0A

-1.0A

0A
0V -112mV -224mV -336mV -448mV -560mV
I(V3)
V_VDS
Evaluation circuit

V3
0Vdc

VDS
-10Vdc

U1
2SJ304
VGS
-10Vdc

0

Simulation Result

ID=-7A, VGS=-10V Measurement Simulation Error (%)
R DS (on) m 80.00 80.00 0.00


Gate Charge Characteristic

-16V

-14V

-12V

-10V

-8V

-6V

-4V

-2V

0V
0 5n 10n 15n 20n 25n 30n 35n 40n 45n 50n
V(W1:1)
Time*1mA
Evaluation circuit

Vsense

I1
D1
Dbreak -14Adc

U1
2SJ304_P

I1 = 0 I3 W
I2 = 1m -
TD = 0 +
TR = 1n VD
TF = 1n W1 -48Vdc
PW = 100u ION = 0A
PER = 10m IOFF = 1mA

0

Simulation Result

VDD=-48V,ID=-14A
,VGS=-10V Measurement Simulation Error (%)
Qgs nc 5.00 5.03 0.60
Qgd nc 15.00 14.96 -0.27
Qg nc 45.00 44.99 -0.02


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
- VDS(V) Error(%)
2 750.000 748.000 -0.27
3 650.000 651.000 0.15
5 530.000 532.000 0.38
10 390.000 389.000 -0.26
20 280.000 275.000 -1.79
50 185.000 184.000 -0.54


Switching Time Characteristic


-16V

-14V

-12V

-10V

-8V

-6V

-4V

-2V

0V

2V
0.90us 0.93us 0.96us 0.99us 1.02us 1.05us 1.08us 1.11us
V(L3:1)/1 V(Vsense:+)/3
Time

Evaluation circuit

Vsense RL
3

4.3

R1 L3 2 U1
2SJ304_P
50nH
PER = 10m 4.7 VD
PW = 10u -30Vdc
TF = 10n R2
TR = 10n
TD = 1u V1 4.7
V2 = 20
V1 = 0

0

Simulation Result

ID=-7A, VDD=-30V
Measurement Simulation Error(%)
VGS=0/-10V
ton ns 30.00 29.99 -0.03


Output Characteristic


-20A

-10V -8V
-18A

-6V
-16A
-4 V
-14A

-12A

-10A

-8A

-6A -3V

-4A
-2.5V
-2A
VGS=-2V
0A
0V -1V -2V -3V -4V -5V -6V -7V -8V -9V -10V
I(V3)
V_VDS
Evaluation circuit

V3
0Vdc

U1 VDS
2SJ304_P -10Vdc

VGS
0Vdc

0


Equivalent Circuit

F1
A
G1 R2 S1 S
F
R1 E1 300 - - VON = 100mV
IN+ OUT+ 1 VOFF = 90mV
IN- OUT- + +
+ +
- C1 ROFF = 50MEG
GVALUE
- RON = 1m
E 100p

D1 D2

K
{V(N00091,N00063)-V(N00022,N00019)}
0


BODY DIODE
Forward Current Characteristic

100A

10A

1.0A

300mA
0V 0.1V 0.3V 0.5V 0.7V 0.9V 1.1V 1.3V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
U3
2SJ304_P
0Vdc

0


Comparison Graph


100
Measurement
Simulation
- Drain reverse Current - IDR (A)

10

1
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source Voltage VDS (V)
Simulation Result

VDS(V)
- IDR(A) %Error
1 0.730 0.728 -0.32
2 0.750 0.752 0.29
5 0.800 0.800 0.00
10 0.860 0.861 0.06
20 0.950 0.956 0.63
30 1.040 1.043 0.24
50 1.200 1.203 0.24


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
4.544us 4.828us 5.112us 5.396us 5.680us 5.964us
I(R1)
Time

Evaluation Circuit

R1

50

V1 = -9.3V V1
V2 = 10.7V U1
TD = 30n D2SJ304
TR = 10ns
TF = 10ns
PW = 5us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj ns 40.00 39.78 -0.55
trb ns 155.00 156.60 1.03
trr ns 195.00 196.38 0.71


Reverse Recovery Characteristic Reference

Measurement

Trj=40(ns)
Trb=155(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE ESD PROTECTION DIODE

Zener Voltage Characteristic


10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1 U1 R2
0Vdc 2SJ304 100MEG

0


Zener Voltage Characteristic Reference

Measurement


SPICE MODEL of 2SJ304 (Professional+BDP Model) in SPICE PARK

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