SPICE MODEL of 2SK2886 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK2886
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1

Circuit Configuration

U1
2SK2886

Equivalent Circuit

D

S1
- -
+ +
R2
S
R1 10MEG DGD

10M CGD
S2
+ +
- -

Q1
S
G

S

2

MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3

Transconductance Characteristics

Circuit Simulation result

VDS=10V

Comparison table

gfs (S)
ID (A) %Error
Measurement Simulation
2 10.150 10.203 0.52
5 15.460 15.495 0.23
10 20.910 20.950 0.19
20 27.770 27.832 0.22
50 39.150 39.022 -0.33
100 48.450 48.506 0.12

4

Vgs-Id Characteristics


120A

100A

80A

60A

40A

20A

0A
0V 2V 4V 6V 8V 10V 12V
I(U1:2)
V_VGS

Evaluation circuit

U1
2SK2886
V1

10V
VGS

0

5

Comparison Graph


VDS=10V

Comparison table

VGS (V)
ID (A) %Error
1 2.442 2.379 -2.58
2 2.560 2.493 -2.63
5 2.785 2.725 -2.15
10 3.091 2.998 -3.00
20 3.485 3.407 -2.25
50 4.300 4.294 -0.13
100 5.520 5.428 -1.66

6

Rds (on) Characteristics


30A

25A

20A

15A

10A

5A

0A
0V 100mV 200mV 300mV 400mV
I(U1:2)
V_V1

Evaluation circuit

U1
2S K28 86
V1

VG S
10 V

0

Test condition: VGS=10(V), ID=25(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 14.000 13.997 -0.02

7

Output Characteristics


50A
10 4.25
8
40A
6
5 3.75
4.5
30A
3.5

20A

3
10A

VGS = 2.5V

0A
0V 4V 8V 12V 16V 20V
I(U1:2)
V_V1

Evaluation circuit

U1
2SK2886
V1
VGS

0

8

Capacitance Characteristics

Simulation result

Measurement
Simulation

Comparison table

Cbd (pF)
VDS (V) %Error
0.1 1900.000 1884.100 -0.84
0.2 1800.000 1814.000 0.78
0.5 1645.000 1616.600 -1.73
1 1450.000 1451.400 0.10
2 1200.000 1212.000 1.00
5 910.000 892.160 -1.96
10 705.000 680.700 -3.45
20 488.000 509.500 4.41
50 340.000 342.390 0.70
60 310.000 315.950 1.92

9

Gate Charge Characteristics


20V

16V

12V

8V

4V

0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mA

Evaluation circuit

U1 D1
2SK2886 dmod ID
45A
I1 = 0 W1
I2 = 1m +
TF = 10n
TR = 10n -
VDD
TD = 0 IG W 40V
PER = 1 IOFF = 1mA
PW = 10m ION = 0

0

Test condition: VDD=40(V), VGS=10(V), ID=45(A)
Qgs nC 11.700 11.622 -0.67
Qgd nC 23.385 22.366 -4.36
Qg nC 66.000 65.965 -0.05

10

Switching Time Characteristics


15V

10V

5V

0V
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
V(U1:2)/2.5 V(U1:1)
Time

Evaluation circuit1

L2
2 1
U1
50nH
L1 2SK2886
R1
30nH RL
V1 = 0 1 2 1.0
V2 = 20
TD = 2u V1
TR = 4n 50 R2 VDD
TF = 4n 50 25
PW = 5u
PER = 500u

0

Test condition: VDD=25(V), VGS=0/10(V), ID=25(A), RG=50, RL=1
ton ns 70.000 70.675 0.96

11

Equivalent Circuit

F1
A
G1 R2 S1 S
F
R1 E1 300 - - VON = 100mV
IN+ OUT+ 1 VOFF = 90mV
IN- OUT- + +
+ +
- C1 ROFF = 50MEG
GVALUE
- RON = 1m
E 100p

D1 D2

K
{V(N00091,N00063)-V(N00022,N00019)}
0

Circuit Configuration

U1
D2SK2886_P

12

Body Diode Forward Current Characteristics


100A

10A

1.0A

100mA
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V
I(VDS)
V_VDS

Evaluation circuit

U1
VDS 2SK2886

0

13

Comparison Graph

Simulation result

Comparison table

-VDS (V)
IDR (A) %Error
0.3 0.653 0.654 0.15
0.5 0.672 0.672 -0.01
1 0.702 0.698 -0.57
2 0.727 0.728 0.14
5 0.779 0.781 0.26
10 0.839 0.843 0.48
20 0.930 0.939 0.97
50 1.185 1.174 -0.93
100 1.530 1.516 -0.93
125 1.665 1.678 0.78

14

Reverse Recovery Characteristics


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
Time

Evaluation circuit

R1

50
V1 = -9 .4 V
V2 = 10.7V
TD = 0 ns V1
TR = 1 0n s
TF = 10n s
PW = 1 us U1
PE R = 10 0us D2 SK2 88 6_P

0

Comparison Measurement vs. Simulation
trj ns 28.800 28.661 -0.48
trb ns 105.000 104.667 -0.32
trr ns 133.800 133.328 -0.35

15

Reverse Recovery Characteristics Reference

Measurement

trj = 28.8(ns)
trb = 105(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50

Example

Relation between trj and trb

16

ESD PROTECTION DIODE
Zener Voltage Characteristics


10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
V_VGS

Evaluation circuit

U1
2SK2886
R1
1G
VGS

0

17

Zener Voltage Characteristics Reference

Measurement

IZ = 1(mA)
VZ =22.9(V) at IZ=1.09mA

18

SPICE MODEL of 2SK2886 (Professional+BDP Model) in SPICE PARK

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