SPICE MODEL of TK10A60D (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TK10A60D
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
10
Measurement
Simulation
Transconductance GFS (s)
8
6
4
2
0
0 2 4 6 8 10
Drain Current ID (A)
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
1 2.380 2.484 4.370
2 3.360 3.472 3.333
5 5.500 5.365 -2.455
10 7.750 7.399 -4.529
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4. Vgs-Id Characteristic
Circuit Simulation result
20A
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(V3)
V_V1
Evaluation circuit
V3
U1
TK10A60D
VDS
20Vdc
VGS
0
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5. Comparison Graph
Circuit Simulation Result
20
Measurement
Simulation
16
DRAIN CURRENT ID (A)
12
8
4
0
0 2 4 6 8 10
GATE-SOURCE VOLTAGE VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 4.800 4.766 -0.71
2 5.150 5.102 -0.93
5 5.800 5.779 -0.37
10 6.500 6.561 0.94
20 7.700 7.700 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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6. Rds(on) Characteristic
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.62V 1.24V 1.86V 2.48V 3.10V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
TK10A60D
VDS
10Vdc
VGS
10Vdc
0
Simulation Result
ID = 5A, VGS = 10V Measurement Simulation Error (%)
R DS (on) m 620.000 620.400 0.065
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 5n 10n 15n 20n 25n 30n 35n 40n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
I1
U1 D1
TK10A60D Dbreak 10Adc
W1
+
I2
-
TD = 0 W VD
ION = 0A 400Vdc
IOFF = 1mA
0
Simulation Result
VDD=400V, ID=10A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 8.00 8.01 0.12
Qgd nC 9.20 9.18 -0.22
Qg nC 25.00 22.50 -10.00
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
10 217.000 217.500 0.23
20 163.000 161.370 -1.00
50 92.800 95.580 3.00
100 61.700 60.000 -2.76
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9. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
-2V
4.85us 4.95us 5.05us 5.15us 5.25us
V(2) V(3)/20
Time
Evaluation circuit
Vsense RL
3
50nH 40
R1 L3 U1
2 TK10A60D
V1 = 0 50 30nH VDD
V2 = 20 V1 200Vdc
TD = 5u R2
TR = 10n 50
TF = 10n
PW = 10u
PER = 10m
0
Simulation Result
ID=5A, VDD=200V
Measurement Simulation Error (%)
VGS=0/10V
ton ns 55.00 54.99 -0.02
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Output Characteristic
Circuit Simulation result
20A
10 8 7.5
16A
7
6.75
12A
6.5
8A
6
5.5
4A
VGS=5V
0A
0V 10V 20V 30V 40V 50V
I(Vsense)
V_VD
Evaluation circuit
Vsense
U1
TK10A60D
VD
10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 1.0V 2.0V 2.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
TK10A60D
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Drain Reverse Current IDR (A)
10
1
0.1
0 0.4 0.8 1.2
Drain-Source Voltage VDS (V)
Simulation Result
VSD(V)
IDR(A) Error (%)
Measurement Simulation
0.1 0.615 0.608 -1.14
0.2 0.645 0.639 -0.93
0.5 0.685 0.686 0.15
1 0.720 0.728 1.11
2 0.780 0.782 0.26
5 0.880 0.877 -0.34
10 0.970 0.977 0.72
20 1.135 1.121 -1.23
30 1.240 1.242 0.16
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13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
14us 16us 18us 20us 22us 24us 26us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.3V V1 U1
V2 = 10.7V TK10A60D
TD = 18ns
TR = 7.5ns
TF = 10ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Characteristic Unit Measurement Simulation Error (%)
trj ns 720.00 715.80 -0.58
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13

14. Reverse Recovery Characteristic Reference
Measurement
Trj=720(ns)
Trb=960(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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