SPICE MODEL of 2SK3569 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: MOSFET (Professional)
PART NUMBER: 2SK3569
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

Circuit Configuration
2

1
2SK3569

3

Equivalent Circuit

D

S1
- -
+ +
R2
S
R1 10MEG DGD

10M CGD
S2
+ +
- -

Q1
S
G

S


MOSFET MODEL PARAMETERS

PSpice
model Model description
parameters
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

14
Measurement
Simulation
12
TRANSCONDUCTANCE Gfs(s)

10

8

6

4

2

0
0 2 4 6 8 10 12
DRIAN CURRENT ID (A)

Comparison table

Gfs(S)
Id(A) Error(%)
Measurement Simulation
1 3.703 3.774 1.91
2 5.195 5.249 1.05
5 8.330 8.065 -3.19
10 11.500 11.038 -4.02


Vgs-Id Characteristic

Circuit Simulation result

20A

16A

12A

8A

4A

0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VGS

Evaluation circuit

Vsense

2SK3569 VDS
20Vdc

VGS

0


Comparison Graph


10
Measurement
Simulation
9

8

7
DRAIN CURRENT ID (A)

6

5

4

3

2

1

0
0 1 2 3 4 5 6 7
GATE-SOURCE VOLTAGE VGS (V)

Simulation Result

VGS(V)
ID(A) Error (%)
0.5 3.6700 3.8046 3.67
1 3.8900 3.9626 1.87
2 4.1850 4.1889 0.09
5 4.6300 4.6481 0.39
10 5.1250 5.1818 1.11
20 5.7400 5.9658 3.93


Rds(on) Characteristic


5.0A

4.0A

2.0A

0A
0V 5V 10V
I(Vsense)
V_VDS

Evaluation circuit

Vsense

2SK3569 VDS
20Vdc

VGS
10Vdc

0

Simulation Result

ID=10A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.54  0.54  0.00


Gate Charge Characteristic
20V

16V

12V

8V

4V

0V
0 10n 20n 30n 40n 50n 60n
V(W1:3)
Time*1mA

Evaluation circuit

Vsense

I1
D1
Dbreak 10Adc
2SK3569
W1
+

-
I2
TD = 0 W VD
ION = 0A 200Vdc
IOFF = 1mA

0

Simulation Result

VDD=200V,
Measurement Simulation Error (%)
ID=10A
Qgs 8.00 nC 7.990 nC -0.12
Qgd 17.00 nC 16.929 nC -0.42
Qg 37.5 nC 37.500 nC 0.00


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 2050 2025 -1.2195
0.2 1950 1935 -0.7692
0.5 1700 1720 1.1765
1 1480 1450 -2.0270
2 1100 1102 0.1818
5 620 633 2.0968
10 370 372 0.5405
20 195 200 2.5641
50 85 84 -1.1765
100 44 42 -4.5455
0.1 2050 2025 -1.2195


Switching Time Characteristic

12V

11V

10V

9V

8V

7V

6V

5V

4V

3V

2V

1V

0V
0.40us 0.60us 0.80us 1.00us 1.20us 1.40us 1.60us 1.80us
V(L3:2) V(3)/20
Time

Evaluation circuit

Vsense RL
3

40

V1 = 0

V2 = 20 R1 L3 2
TD = 1u
50 30nH
2SK3569 VD
TR = 10n V1 200Vdc
R2
TF = 10n
50
PW = 10u

PER = 10m

0

Simulation Result

ID=5A,
VDD= 200V, Measurement Simulation Error(%)
VGS=0/10V
Td(on) 50.000 ns 51.991 ns 3.98


Output Characteristic


10A
6 5.3V
V
10,8
5.1V
8A
5.0V

4.8V
6A

4.6V

4A
4.4 V

4.2V
2A

VGS= 4V
0A
0V 2V 4V 6V 8V 10V
I(Vsense)
V_VDS
Evaluation circuit

Vsense

2SK3569 VDS
20Vdc

VGS

0


Forward Current Characteristic


100A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1 2SK3569
0Vdc

0


Comparison Graph


100
Measurement
Simulation
DRAIN REVERSE CURRENT IDR (A)

10

1

0.1
0.000 0.200 0.400 0.600 0.800 1.000 1.200
SOURCE-DRAIN VOLTAGE VSD (V)

Simulation Result

VSD(V)
IDR(A) %Error
0.1 0.630 0.627 -0.54
0.2 0.648 0.650 0.34
0.5 0.683 0.683 0.00
1 0.709 0.711 0.32
2 0.748 0.746 -0.27
5 0.817 0.813 -0.54
10 0.895 0.899 0.45
20 1.052 1.051 -0.11


Reverse Recovery Characteristic (Body Diode)


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
4us 6us 8us 10us 12us 14us 16us 18us 20us 22us
I(R1)
Time

Evaluation Circuit

R1 50

V1 = -9.3V

V2 = 10.8V

TD = 5.78n
D2SK3569_PRO
TR = 10ns V1 U3

TF = 5.7ns

PW = 10us

PER = 1000us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj 1.32 ns 1.314 ns -0.45
trb 1.4 ns 1.404 ns 0.25
trr 2.72 ns 2.718 ns -0.09


Reverse Recovery Characteristic (Body Diode) Reference

Trj= (1.32us)
Trb= (1.4us)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit

R1

0.01m 2SK3569 IOPEN
0Adc

V1
0Vdc

0


Zener Voltage Characteristic Reference


SPICE MODEL of 2SK3569 (Professional+BDP Model) in SPICE PARK

Recommended

Recommended

More Related Content

What's hot

What's hot (20)

Similar to SPICE MODEL of 2SK3569 (Professional+BDP Model) in SPICE PARK

Similar to SPICE MODEL of 2SK3569 (Professional+BDP Model) in SPICE PARK (17)

More from Tsuyoshi Horigome

More from Tsuyoshi Horigome (20)

Recently uploaded

Recently uploaded (20)

SPICE MODEL of 2SK3569 (Professional+BDP Model) in SPICE PARK