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Device Modeling Report



COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK3938
MANUFACTURER: Panasonic
Body Diode (Professional) / ESD Protection Diode




                   Bee Technologies Inc.




     All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Circuit Configuration




        2SK3938




Equivalent Circuit


                                                                        D




                                        S1
                                        -    -
                                        +    +
                                                 R2
                                    S
                            R1                   10MEG            DGD

                           10M      CGD
                                                             S2
                                                         +    +
                                                         -    -

                                                                            Q1
                                                              S
                   G




                                                                        S




           All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL

PSpice model
                                      Model description
parameter
LEVEL
L              Channel Length
W              Channel Width
KP             Transconductance
RS             Source Ohmic Resistance
RD             Ohmic Drain Resistance
VTO            Zero-bias Threshold Voltage
RDS            Drain-Source Shunt Resistance
TOX            Gate Oxide Thickness
CGSO           Zero-bias Gate-Source Capacitance
CGDO           Zero-bias Gate-Drain Capacitance
CBD            Zero-bias Bulk-Drain Junction Capacitance
MJ             Bulk Junction Grading Coefficient
PB             Bulk Junction Potential
FC             Bulk Junction Forward-bias Capacitance Coefficient
RG             Gate Ohmic Resistance
IS             Bulk Junction Saturation Current
N              Bulk Junction Emission Coefficient
RB             Bulk Series Resistance
PHI            Surface Inversion Potential
GAMMA          Body-effect Parameter
DELTA          Width effect on Threshold Voltage
ETA            Static Feedback on Threshold Voltage
THETA          Mobility Modulation
KAPPA          Saturation Field Factor
VMAX           Maximum Drift Velocity of Carriers
XJ             Metallurgical Junction Depth
UO             Surface Mobility




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transconductance Characteristic

Circuit Simulation Result




Comparison table


                                     gfs (ms)
    Id(mA)                                                                  Error(%)
                    Measurement                   Simulation
       5.000                      38.462                     38.462              0.000
      10.000                      55.556                     54.348             -2.174
      20.000                      76.923                     77.220              0.386
      40.000                    108.110                     108.992             0.817
      80.000                    148.150                     154.143             4.046




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Vgs-Id Characteristic

Circuit Simulation result

           140mA



           120mA




             80mA




             40mA




                0A
                      0V       1.0V         2.0V          3.0V       4.0V   5.0V
                           I(V3)
                                                   V_V1
Evaluation circuit


                                                V3


                                                     0V dc




                                      U4
                                      2SK3938                    V2
                                                                   3V dc


                V1
              4V dc



                                        0




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

Circuit Simulation Result




Simulation Result


                                     VGS(V)
    ID(mA)                                                              Error (%)
                    Measurement                 Simulation
        5.000                    1.900                      1.924             1.263
       10.000                    2.020                      2.034             0.693
       20.000                    2.180                      2.190             0.459
      50.000                     2.500                      2.499            -0.040
     100.000                     2.900                      2.847            -1.828




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Rds(on) Characteristic

Circuit Simulation result


                     10mA




                        0A
                             0V                                                 200mV
                                  I(V3)
                                                          V_V2

Evaluation circuit


                                                     V3


                                                              0Vdc




                                           U4                         V2
                                           2SK3938                      3Vdc




                       V1
                     4Vdc




                                             0



Simulation Result

   ID=10mA, VGS=4.0V                 Measurement                     Simulation         Error (%)
         R DS (on)                        5.000                        5.000              0.000




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Gate Charge Characteristic
Circuit Simulation result
                     5.0V




                     4.0V




                     3.0V




                     2.0V




                     1.0V




                       0V
                            0s 0.4ns         1.2ns    2.0ns         2.8ns           3.6ns
                               V(W1:2)
                                                     Time*1m
Evaluation circuit


                                                                            V2
                                                                            0V dc




                                                                               D1
                                                                              Dbreak    I2
       PER = 1000u                                        U1
       PW = 6 00u                                         2SK3938
       TF = 10n                  W1
       TR = 10n                    +
       TD = 0
                                      -
       I2 = 1m                                                                          V1
                      I1         W                                                      24V dc
       I1 = 0                    IOFF = 1m
                                 ION = 0uA



                                                          0



Simulation Result

     VDD=24V,ID=0.1A                      Measurement         Simulation               Error (%)
         ,VG=4V
           Qgs                               0.464 nC               0.465 nC                      0.216
           Qgd                               1.936 nC               1.930 nC                     -0.310
           Qg                                3.270 nC               3.275 nC                      0.153




                     All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Gate Charge Characteristic                                               Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic




                                                               Measurement
                                                               Simulation




Simulation Result


                                      Cbd(pF)
         VDS(V)                                                      Error(%)
                       Measurement              Simulation
             0.100                10.500                10.580               0.762
             0.200                 9.900                 9.830              -0.707
             0.500                 8.500                 8.400              -1.176
             1.000                 7.000                  7.100             1.429
             2.000                 5.700                  5.790              1.579
             5.000                 4.300                  4.280             -0.465
            10.000                 3.400                  3.360             -1.176
            20.000                 2.600                  2.630              1.154




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Switching Time Characteristic

Circuit Simulation result

         5.0V




         4.0V




         3.0V




         2.0V




         1.0V




                0V
                4.8us 5.0us 5.2us        5.4us       5.6us    5.8us        6.0us   6.2us      6.4us
                    V(2)   V(3)
                                                        Time


Evaluation circuit

                                                                  Vsense   L2      RL

                                                         3
                                                                           30nH    290




                       R1               L1
      V1 = 0                                     2
                                                                                              C1
                       50               30nH
      V2 = 6                                                 U1                                        VD
                                                             2SK3938                          100uF    3Vdc
      TD = 1u     V1              R2

      TR = 10n                     50

      TF = 10n

      PW = 5u

      PER = 10u
                                                              0




Simulation Result

      ID=10mA, VDD=3V
                                  Measurement                          Simulation              Error(%)
         VGS=0V~3V
            ton                         350.000 ns                     350.698           ns           0.199




                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristic

Circuit Simulation result


               120mA




                                                            VGS=2.8
                                                            V
                80mA



                                                               2.6V



                40mA                                                2.4V


                                                                       2.2V

                                                                               2.0V
                     0A
                          0V            4V                    8V               12V
                               I(V3)
                                                   V_V2

Evaluation circuit


                                                       V3


                                                             0Vdc




                                             U4                       V2
                                             2SK3938                    3Vdc




                       V1
                     4Vdc




                                               0




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Forward Current Characteristic

Circuit Simulation Result


              100mA




               50mA




                     0A
                          0V                      -0.5V                -1.0V
                               I(R1)
                                                  V_V1



Evaluation Circuit


                                            R1

                                          0.01m




                                  V1
                                       DC = 0             U1
                                       AC =               2SK3938
                                       TRAN =




                                   0




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

Circuit Simulation Result




Simulation Result


                                VSD (mV)
    IDR (mA)                                                            %Error
                      Measurement        Simulation
          1.000              610.000            611.680                      0.275
          2.000              637.000           637.360                       0.057
          5.000              671.000           671.307                       0.046
         10.000              700.000           696.989                      -0.430
         20.000              725.000           722.666                      -0.322
         50.000              756.000           756.613                       0.081
        100.000              780.000           782.293                       0.294




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Forward Current Characteristic                                           Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic

Circuit Simulation Result
          40mA




                0A




         -40mA
           14.84us   14.92us                  15.00us        15.08us   15.16us
                I(R1)
                                                    Time
Evaluation Circuit

                                                        R1

                                                        50
                                 V1 = -0.3V

                                 V2 = 1.72V

                                 TD = 0s       V1

                                 TR = 10n

                                 TF = 10n                              U2
                                                                       D3938_PRO
                                 PW = 15us

                                 PER = 100us



                                               0



Compare Measurement vs. Simulation

                      Measurement                   Simulation                 Error (%)
          trj                 8.800 ns                    8.861 ns                   0.693
         trb                 20.800 ns                  20.703 ns                   -0.466
         trr                 29.600 ns                  29.564 ns                   -0.122




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic                                         Reference




Trj=8.8(ns)
Trb=20.8(ns)
Conditions:Ifwd=lrev=0.02(A),Rl=50




                                                      Example




                             Relation between trj and trb




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic

Circuit Simulation Result


             10mA

               9mA

               8mA

               7mA

               6mA

               5mA

               4mA

               3mA

               2mA

               1mA

                0A
                     0V      5V 10V        20V                 30V            40V   50V
                             I(R1)
                                                 V_V1


Evaluation Circuit


                                              OPEN
                                                                     OPEN
                                                                     R2

                                   R1                                    1G


                                   0.01m                             0
                                                     U1
                                                     2SK3938

                              V1
                      0Vdc




                                                 0




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic                                             Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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MOSFET Device Modeling Report

  • 1. Device Modeling Report COMPONENTS: MOSFET (Professional Model) PART NUMBER: 2SK3938 MANUFACTURER: Panasonic Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. Circuit Configuration 2SK3938 Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Transconductance Characteristic Circuit Simulation Result Comparison table gfs (ms) Id(mA) Error(%) Measurement Simulation 5.000 38.462 38.462 0.000 10.000 55.556 54.348 -2.174 20.000 76.923 77.220 0.386 40.000 108.110 108.992 0.817 80.000 148.150 154.143 4.046 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. Vgs-Id Characteristic Circuit Simulation result 140mA 120mA 80mA 40mA 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V3) V_V1 Evaluation circuit V3 0V dc U4 2SK3938 V2 3V dc V1 4V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(mA) Error (%) Measurement Simulation 5.000 1.900 1.924 1.263 10.000 2.020 2.034 0.693 20.000 2.180 2.190 0.459 50.000 2.500 2.499 -0.040 100.000 2.900 2.847 -1.828 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. Rds(on) Characteristic Circuit Simulation result 10mA 0A 0V 200mV I(V3) V_V2 Evaluation circuit V3 0Vdc U4 V2 2SK3938 3Vdc V1 4Vdc 0 Simulation Result ID=10mA, VGS=4.0V Measurement Simulation Error (%) R DS (on) 5.000  5.000  0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Gate Charge Characteristic Circuit Simulation result 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0s 0.4ns 1.2ns 2.0ns 2.8ns 3.6ns V(W1:2) Time*1m Evaluation circuit V2 0V dc D1 Dbreak I2 PER = 1000u U1 PW = 6 00u 2SK3938 TF = 10n W1 TR = 10n + TD = 0 - I2 = 1m V1 I1 W 24V dc I1 = 0 IOFF = 1m ION = 0uA 0 Simulation Result VDD=24V,ID=0.1A Measurement Simulation Error (%) ,VG=4V Qgs 0.464 nC 0.465 nC 0.216 Qgd 1.936 nC 1.930 nC -0.310 Qg 3.270 nC 3.275 nC 0.153 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. Gate Charge Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 10.500 10.580 0.762 0.200 9.900 9.830 -0.707 0.500 8.500 8.400 -1.176 1.000 7.000 7.100 1.429 2.000 5.700 5.790 1.579 5.000 4.300 4.280 -0.465 10.000 3.400 3.360 -1.176 20.000 2.600 2.630 1.154 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 11. Switching Time Characteristic Circuit Simulation result 5.0V 4.0V 3.0V 2.0V 1.0V 0V 4.8us 5.0us 5.2us 5.4us 5.6us 5.8us 6.0us 6.2us 6.4us V(2) V(3) Time Evaluation circuit Vsense L2 RL 3 30nH 290 R1 L1 V1 = 0 2 C1 50 30nH V2 = 6 U1 VD 2SK3938 100uF 3Vdc TD = 1u V1 R2 TR = 10n 50 TF = 10n PW = 5u PER = 10u 0 Simulation Result ID=10mA, VDD=3V Measurement Simulation Error(%) VGS=0V~3V ton 350.000 ns 350.698 ns 0.199 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 12. Output Characteristic Circuit Simulation result 120mA VGS=2.8 V 80mA 2.6V 40mA 2.4V 2.2V 2.0V 0A 0V 4V 8V 12V I(V3) V_V2 Evaluation circuit V3 0Vdc U4 V2 2SK3938 3Vdc V1 4Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 13. Forward Current Characteristic Circuit Simulation Result 100mA 50mA 0A 0V -0.5V -1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 DC = 0 U1 AC = 2SK3938 TRAN = 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 14. Comparison Graph Circuit Simulation Result Simulation Result VSD (mV) IDR (mA) %Error Measurement Simulation 1.000 610.000 611.680 0.275 2.000 637.000 637.360 0.057 5.000 671.000 671.307 0.046 10.000 700.000 696.989 -0.430 20.000 725.000 722.666 -0.322 50.000 756.000 756.613 0.081 100.000 780.000 782.293 0.294 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 15. Forward Current Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 16. Reverse Recovery Characteristic Circuit Simulation Result 40mA 0A -40mA 14.84us 14.92us 15.00us 15.08us 15.16us I(R1) Time Evaluation Circuit R1 50 V1 = -0.3V V2 = 1.72V TD = 0s V1 TR = 10n TF = 10n U2 D3938_PRO PW = 15us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 8.800 ns 8.861 ns 0.693 trb 20.800 ns 20.703 ns -0.466 trr 29.600 ns 29.564 ns -0.122 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 17. Reverse Recovery Characteristic Reference Trj=8.8(ns) Trb=20.8(ns) Conditions:Ifwd=lrev=0.02(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 18. Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 20V 30V 40V 50V I(R1) V_V1 Evaluation Circuit OPEN OPEN R2 R1 1G 0.01m 0 U1 2SK3938 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 19. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006